POLYCRYSTALLINE CDTE THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION
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Abstract
A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
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Citations
42 Claims
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1-22. -22. (canceled)
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23. A photovoltaic device, comprising:
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a glass substrate or superstrate; a first layer adjacent to said glass superstrate or substrate, said first layer comprising tellurium (Te) and cadmium (Cd), wherein said first layer is doped n-type; a second layer adjacent to said first layer, said second layer comprising Cd and Te, wherein said second layer is doped p-type; and a third layer adjacent to said second layer, said third layer comprising Cd and Te, wherein said third layer is doped n-type or p-type. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A photovoltaic device, comprising:
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a glass substrate or superstrate; a first layer adjacent to said glass superstrate or substrate, the first layer comprising cadmium (Cd) and tellurium (Te), wherein the first layer is doped n-type; a second layer adjacent to the first layer, the second layer comprising Cd and Te, wherein the second layer is doped p-type; and a third layer formed of an n-p or p-n heterojunction or homojunction adjacent to said second layer, wherein said third layer is configured to generate electricity upon exposure to light. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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Specification