SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A semiconductor device, comprising:
- at least one first conductive layer stacked on a substrate where a cell region and a contact region are defined;
at least one first slit passing through the first conductive layer;
a plurality of second conductive layers stacked on the first conductive layer;
a second slit passing through the first and second conductive layers and connected with one side of the first slit; and
a third slit passing through the first and second conductive layers and connected with an other side of the first slit.
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Abstract
A semiconductor device includes at least one first conductive layer stacked on a substrate where a cell region and a contact region are defined; at least one first slit passing through the first conductive layer, second conductive layers stacked on the first conductive layer; a second slit passing through the first and second conductive layers and connected with one side of the first slit, and a third slit passing through the first and second conductive layers and connected with the other side of the first slit.
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20 Claims
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1. A semiconductor device, comprising:
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at least one first conductive layer stacked on a substrate where a cell region and a contact region are defined; at least one first slit passing through the first conductive layer; a plurality of second conductive layers stacked on the first conductive layer; a second slit passing through the first and second conductive layers and connected with one side of the first slit; and a third slit passing through the first and second conductive layers and connected with an other side of the first slit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification