PACKAGE OF FINGER PRINT SENSOR AND FABRICATING METHOD THEREOF
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor die comprising a first surface, a second surface opposite the first surface, and side surfaces connecting the first and second surfaces, where the first surface comprises an image sensor and a plurality of bond pads;
a first passivation layer covering the first surface of the semiconductor die and comprising openings that expose the bond pads;
first redistribution layers (RDLs) electrically connected to the bond pads exposed through the first passivation layer;
an encapsulation layer surrounding at least the side surfaces of the semiconductor die;
a plurality of vias electrically connected to the first RDLs at a first end of the vias and passing through the encapsulation layer;
second RDLs electrically connected to a second end of the vias and at least partially formed over the encapsulation layer;
a second passivation layer exposing first portions of the second RDLs and covering second portions of the second RDLs and the encapsulation layer; and
electrical connection structures coupled to the exposed first portions of the second RDLs.
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Abstract
Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.
46 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor die comprising a first surface, a second surface opposite the first surface, and side surfaces connecting the first and second surfaces, where the first surface comprises an image sensor and a plurality of bond pads; a first passivation layer covering the first surface of the semiconductor die and comprising openings that expose the bond pads; first redistribution layers (RDLs) electrically connected to the bond pads exposed through the first passivation layer; an encapsulation layer surrounding at least the side surfaces of the semiconductor die; a plurality of vias electrically connected to the first RDLs at a first end of the vias and passing through the encapsulation layer; second RDLs electrically connected to a second end of the vias and at least partially formed over the encapsulation layer; a second passivation layer exposing first portions of the second RDLs and covering second portions of the second RDLs and the encapsulation layer; and electrical connection structures coupled to the exposed first portions of the second RDLs. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a semiconductor die comprising a first surface, a second surface opposite the first surface, and side surfaces connecting the first and second surfaces, where the first surface comprises an image sensor and a plurality of bond pads; an encapsulant surrounding the side surfaces and the second surface of the semiconductor die; a first passivation layer covering the first surface of the semiconductor die and comprising openings that expose the bond pads; first redistribution layers (RDLs) electrically connected to the bond pads exposed through the first passivation layer; a plurality of vias electrically connected to the first RDLs at a first end of the vias and passing through the encapsulant; second RDLs electrically connected to a second end of the vias and formed on the encapsulant; a second passivation layer exposing first portions of the second RDLs and covering second portions of the second RDLs and at least a portion of the encapsulant; and electrical connection structures coupled to the exposed first portions of the second RDLs. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising
a semiconductor die comprising a first surface, a second surface opposite the first surface, and side surfaces connecting the first and second surfaces, where the first surface comprises an image sensor and a plurality of bond pads; -
an encapsulant surrounding the side surfaces, but not the first and second surfaces, of the semiconductor die; a first lower passivation layer covering the first surface of the semiconductor die and comprising openings that expose the bond pads; first redistribution layers (RDLs) electrically connected to the bond pads exposed through the first lower passivation layer; a first upper passivation layer covering the second surface of the semiconductor die; a plurality of vias electrically connected to the first RDLs at a first end of the vias and passing through the encapsulant; second RDLs electrically connected to a second end of the vias and formed on the first upper passivation layer; a second upper passivation layer exposing first portions of the second RDLs and covering second portions of the second RDLs and at least a portion of the encapsulant; and electrical connection structures coupled to the exposed first portions of the second RDLs. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification