NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
1. A semiconductor device comprising:
- a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer,wherein said at least one metal layer comprises copper or aluminum; and
a second layer overlying said at least one metal layer;
wherein said second layer comprises second transistors,wherein said second transistors comprise mono-crystal,wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error,wherein said mono-crystal comprises a first region and a second region which are horizontally oriented with respect to each other, said first region comprises a source or drain of said second transistor and said second region comprises a channel of said second transistor,wherein said first region has substantially different dopant concentration than said second region, andwherein said second transistors are gate replacement transistors.
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Accused Products
Abstract
A semiconductor device including: a first single crystal layer including first transistors, first alignment mark, and at least one metal layer, the at least one metal layer overlying the first single crystal layer and includes copper or aluminum; and a second layer overlying the metal layer; the second layer includes second transistors which include mono-crystal and are aligned to the first alignment mark with less than 40 nm alignment error, the mono-crystal includes a first region and second region which are horizontally oriented with respect to each other, the first region has substantially different dopant concentration than the second region.
48 Citations
30 Claims
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1. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, wherein said second transistors comprise mono-crystal, wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error, wherein said mono-crystal comprises a first region and a second region which are horizontally oriented with respect to each other, said first region comprises a source or drain of said second transistor and said second region comprises a channel of said second transistor, wherein said first region has substantially different dopant concentration than said second region, and wherein said second transistors are gate replacement transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, said second transistors comprising mono-crystal, wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error, wherein said mono-crystal comprises a first region and a second region which are horizontally oriented with respect to each other, said first region comprises a source or drain of said second transistor and said second region comprises a channel of said second transistor, wherein said first region has a different doping than said second region and wherein said second transistors is a FinFet transistor. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, said second transistors comprise mono-crystal, wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error, wherein said mono-crystal comprises a first region and a second region which are horizontally oriented with respect to each other, said first region comprises a source or drain of said second transistor and said second region comprises a channel of said second transistor, wherein said first region has a different doping than said second region and wherein said second transistors is a Fully-depleted MOSFET transistor. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, wherein said second transistors comprise mono-crystal, wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error, wherein said mono-crystal comprises a first region and a second region which are horizontally oriented with respect to each other, said first region comprises a source or drain of said second transistor and said second region comprises a channel of said second transistor, wherein said first region has a different dopant type than said second region, and wherein said second transistors are gate replacement transistors. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification