THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR
First Claim
1. A thin film transistor comprising:
- a gate electrode;
a gate insulating layer positioned on or under the gate electrode;
a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other;
a source electrode connected to the second semiconductor; and
a drain electrode connected to the second semiconductor and facing the source electrode,wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, anda content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
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Accused Products
Abstract
The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
24 Citations
17 Claims
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1. A thin film transistor comprising:
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a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17)
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9. A thin film transistor comprising:
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a gate electrode; a semiconductive layer overlapping the gate electrode with a gate insulating layer interposed between the gate electrode and the semiconductive layer, wherein the semiconductive layer includes a first semiconductor and a second semiconductor, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the first semiconductor and the second semiconductor include tin and zinc, and wherein a content ratio of zinc (Zn) to tin (Sn) included in the first semiconductor is substantially the same as a content ratio of zinc (Zn) to tin (Sn) included in the second semiconductor. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification