SMART BRIDGE FOR MEMORY CORE
First Claim
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1. An apparatus comprising:
- a semiconductor device including a multi-ported three-dimensional (3D) memory that includes multiple memory cells arranged in multiple physical levels above a substrate,wherein the multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells.
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Abstract
An apparatus includes a semiconductor device that includes a multi-ported three-dimensional (3D) memory. The multi-ported 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells.
2 Citations
20 Claims
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1. An apparatus comprising:
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a semiconductor device including a multi-ported three-dimensional (3D) memory that includes multiple memory cells arranged in multiple physical levels above a substrate, wherein the multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An apparatus comprising:
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a first memory die comprising a first three-dimensional (3D) memory that includes multiple memory cells arranged in multiple physical levels above a substrate, wherein the first 3D memory includes circuitry associated with operation of the multiple memory cells; a second memory die comprising a second memory; and a periphery die coupled to the first memory die and to the second memory die, wherein the periphery die comprises periphery circuitry corresponding to the first 3D memory and periphery circuitry corresponding to the second memory, and wherein the periphery die is responsive to a memory controller and configured to initiate a first memory operation at the first 3D memory and a second memory operation at the second memory. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method comprising:
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receiving data at a semiconductor device including a multi-ported three-dimensional (3D) memory that includes multiple memory cells arranged in multiple physical levels above a substrate, wherein the multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells; and storing the data in the multi-ported 3D memory. - View Dependent Claims (14, 15, 16)
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17. A method comprising:
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receiving a request at a periphery die, the request received from a memory controller coupled to the periphery die; and in response to the request; initiating a first memory operation at a first memory die comprising a first three-dimensional (3D) memory that includes multiple memory cells arranged in multiple physical levels above a substrate, wherein the first 3D memory includes circuitry associated with operation of the multiple memory cells; and initiating a second memory operation at a second memory die comprising a second memory, wherein the periphery die comprises periphery circuitry corresponding to the first 3D memory and periphery circuitry corresponding to the second memory. - View Dependent Claims (18, 19, 20)
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Specification