SEMICONDUCTOR DEVICE

• US 20140225155A1
• Filed: 09/25/2013
• Published: 08/14/2014
• Est. Priority Date: 02/12/2013
• Status: Active Grant

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Ogawa, Kazuko
• Granted Patent: US 9,059,237 B2
• Time in Patent Office: Days
• US Class Current: 257/139
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

A semiconductor device includes: a first semiconductor region; a second semiconductor region, which is arranged on the first semiconductor region; a third semiconductor region, which is arranged on the second semiconductor region; a plurality of fourth semiconductor regions, each of which is arranged with being spaced from each other on the third semiconductor region; a insulation film arranged on a inner wall of a recess, which extends from upper faces of the fourth semiconductor region to pass through the third semiconductor region and the fourth semiconductor region and reaches the second semiconductor region; a control electrode, a first main electrode, a second main electrode, which is electrically connected to the third semiconductor region and the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region abutting on the second main electrode is 1 or more.

Claims

1. A semiconductor device comprising:

a first semiconductor region, which has a first conductivity type;

a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region;

a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region;

a plurality of fourth semiconductor regions, each of which has the second conductivity type and is arranged with being spaced from each other on the third semiconductor region;

a insulation film arranged on a inner wall of a recess, which extends from upper faces of the fourth semiconductor region to pass through the third semiconductor region and the fourth semiconductor region and reaches the second semiconductor region, wherein the insulation film faces a side face of the third semiconductor region;

a control electrode, which is arranged on the insulation films in the recess;

a first main electrode, which is electrically connected to the first semiconductor region, and

a second main electrode, which is electrically connected to the third semiconductor region and the fourth semiconductor region,

wherein a ratio of a width of the recess to a width of the bird semiconductor region abutting the second main electrode is 1 or more.

2. The semiconductor device according to claim 1,

wherein the ratio is 1 or more and 6 or less.

3. The semiconductor device according to claim 1,

wherein the ratio is 1.5 or more and 3 or less.

4. The semiconductor device according to claim 1,

wherein the ratio is 1.7 or more and 2 or less.

5. The semiconductor device according to claim 1,

wherein the second main electrode is arranged above the control electrode,

wherein an interlayer insulation film is arranged between the control electrode and the second main electrode, and

wherein at least a part of the interlayer insulation film is embedded in the recess.

6. The semiconductor device according to claim 5,

wherein the interlayer insulation film is entirely embedded in the recess.

7. The semiconductor device according to claim 1,

wherein a thickness of the insulation film arranged on a bottom of the recess is thicker than a thickness of the insulation film, which is arranged on a side face of the recess and face the third semiconductor region.

8. The semiconductor device according to claim 1,

wherein the width of the recess is 3 μ

m or more and 20 μ

m or less.

9. A semiconductor device comprising:

A semiconductor device comprising;

a first semiconductor region, which has a first conductivity type;

a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region;

a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region;

a plurality of fourth semiconductor regions, each which has the second conductivity type and is arranged with being spaced from each other on the third semiconductor region;

a insulation film arranged on a inner wall of a recess, which extends from upper faces of the fourth semiconductor region to pass through the third semiconductor region and the fourth semiconductor region and reaches the second semiconductor region, wherein the insulation film faces a side face of the third semiconductor region;

a control electrode, which is arranged on the insulation films in the recess;

a first main electrode, which is electrically connected to the first semiconductor region, and

a second main electrode, which is electrically connected to the third semiconductor region and the fourth semiconductor region,

wherein a ratio of a total area of the recess in the same plane level as an interface between the second semiconductor region and the third semiconductor region to a total area of a part of the third semiconductor region abutting on the second main electrode is 1 or more.

10. The semiconductor device according to claim 9,

wherein the ratio is 1 or more and 6 or less.

11. The semiconductor device according to claim 9,

wherein the ratio is 1.5 or more and 3 or less.

12. The semiconductor device according to claim 9,

wherein the ratio is 1.7 or more and 2 or less.

13. The semiconductor device according to claim 9,

wherein the second main electrode is arranged above the control electrode,

wherein an interlayer insulation film is arranged between the control electrode and the second main electrode, and

wherein at least a part of the interlayer insulation film is embedded in the recess.

14. The semiconductor device according to claim 13,

wherein the interlayer insulation film is entirely embedded in the recess.

15. The semiconductor device according to claim 9,

wherein a thickness of the insulation film arranged on a bottom of the recess is thicker than a thickness of the insulation film, which is arranged on a side face of the recess and face the third semiconductor region.

16. The semiconductor device according to claim 9,

wherein the width of the recess is 3 μ

m or more and 20 μ

m or less.