Semiconductor Light Emitting Device
First Claim
1. A semiconductor light emitting device, comprising:
- a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;
a first electrode, supplying either electrons or holes to the plurality of semiconductor layers;
a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode;
a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and
a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, wherein the first light-transmitting film has a refractive index lower than an effective refractive index of the distributed bragg reflector.
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Accused Products
Abstract
The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.
99 Citations
20 Claims
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1. A semiconductor light emitting device, comprising:
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a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, wherein the first light-transmitting film has a refractive index lower than an effective refractive index of the distributed bragg reflector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor light emitting device comprising:
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a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode supplying either electrons or holes to the plurality of semiconductor layers; a second electrode supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive reflective film, which is formed on the second semiconductor layer, for reflecting light from the active layer towards the first semiconductor layer on the side of the growth substrate and includes a dielectric film and a distributed bragg reflector in order mentioned from the second semiconductor layer; and a light-transmitting film formed on the distributed bragg reflector as part of or separately from the non-conductive reflective film, wherein the light-transmitting film has a refractive index lower than an effective refractive index of the distributed bragg reflector. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeLumens Co., Ltd.
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Original AssigneeSemicon Light Co., Ltd.
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InventorsJeon, Soo Kun, Park, Eun Hyun, Kim, Yong Deok
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/96
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CPC Class CodesH01L 33/20 with a particular shape, e....H01L 33/38 with a particular shapeH01L 33/382 the electrode extending par...H01L 33/44 characterised by the coatin...H01L 33/46 Reflective coating, e.g. di...
