PHOTOELECTRONIC DEVICE AND IMAGE SENSOR

• US 20140239278A1
• Filed: 02/21/2014
• Published: 08/28/2014
• Est. Priority Date: 02/22/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: PARK, Kyung Bae, KIM, Kyu Sik, LEE, Kwang Hee, LEEM, Dong-Seok, LIM, Seon-Jeong
• Granted Patent: US 10,707,432 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 30/81 Electrodes
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

Claims

1. A photoelectronic device, comprising:

a first electrode including a first metal;

an active layer between the first electrode and a second electrode; and

a diffusion barrier layer between the first electrode and the active layer, the diffusion barrier layer including a second metal;

wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and

wherein the first electrode and the diffusion barrier layer are configured to transmit light.

2. The photoelectronic device of claim 1, wherein the first metal comprises silver (Ag), gold (Au), chromium (Cr), germanium (Ge), an alloy thereof, or a combination thereof.

3. The photoelectronic device of claim 1, wherein the second metal is selected from a metal having a thermal diffusivity of less than or equal to about 10⁻

5 m²/s.

4. The photoelectronic device of claim 3, wherein the second metal comprises aluminum (Al), nickel (Ni), cobalt (Co), ruthenium (Ru), palladium (Pd), an alloy thereof, or a combination thereof.

5. The photoelectronic device of claim 1, wherein

the first metal is silver (Ag) or a silver alloy, and

the second metal is aluminum (Al) or an aluminum alloy.

6. The photoelectronic device of claim 1, wherein the first electrode has a thickness of about 1 nm to about 500 nm.

7. The photoelectronic device of claim 1, wherein the diffusion barrier layer has a thickness of about 0.5 nm to about 10 nm.

8. The photoelectronic device of claim 1, further comprising a light transmission auxiliary layer,

wherein the light transmission auxiliary layer comprises a material having a refractive index of about 1.6 to about 2.5.

9. The photoelectronic device of claim 1, wherein a light transmittance of the photoelectronic device is equal to or greater than 80%.

10. The photoelectronic device of claim 1, wherein a dark current of the photoelectronic device is equal to or less than 100 e/s.

11. An organic image sensor, comprising:

an array of photo-sensing devices;

an array of color filters; and

a photoelectronic device;

wherein the photoelectronic device comprises,

a first electrode including a first metal and transmitting incident light,

an active layer disposed between the first electrode and a second electrode, and

a diffusion barrier layer including a second metal, disposed between the first electrode and the active layer and configured to transmit light, wherein a thermal diffusivity of the second metal is lower than a thermal diffusivity of the first metal.

12. The organic image sensor of claim 11, wherein the first metal comprises silver (Ag), gold (Au), chromium (Cr), germanium (Ge), an alloy thereof, or a combination thereof.

13. The organic image sensor of claim 11, wherein the second metal is selected from a metal having thermal diffusivity of less than or equal to about 10⁻

5 m²/s.

14. The organic image sensor of claim 13, wherein the second metal comprises aluminum (Al), nickel (Ni), cobalt (Co), ruthenium (Ru), palladium (Pd), an alloy thereof, or a combination thereof.

15. The organic image sensor of claim 11, wherein the first electrode has a thickness of about 1 nm to about 500 nm.

16. The organic image sensor of claim 11, wherein the diffusion barrier layer has a thickness of about 0.5 nm to about 10 nm.

17. The organic image sensor of claim 11, further comprising a light transmission auxiliary layer,

wherein the light transmission auxiliary layer comprises a material having a refractive index of about 1.6 to about 2.5.

18. The organic image sensor of claim 11, wherein a light transmittance of the photoelectronic device is equal to or greater than 80%.

19. The organic image sensor of claim 11, wherein a dark current of the photoelectronic device is equal to or less than 100 e/s.

20. The organic image sensor of claim 11, wherein the array of color filters includes a red color filter, a green color filter and a blue color filter, and

wherein each of the color filters has a corresponding red, green or blue pixel sensing devices respectively.

21. The organic image sensor of claim 11, wherein

the array of color filters includes a red color filter and a blue color filter, and

the active layer of the photoelectronic device includes an organic material selectively absorbing a light of green wavelength region.