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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20140239298A1
  • Filed: 05/06/2014
  • Published: 08/28/2014
  • Est. Priority Date: 11/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film;

    a second insulating film overlapping with the first insulating film;

    a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising;

    a first oxide semiconductor film having a first crystal structure; and

    a second oxide semiconductor film having a second crystal structure, in contact with the first oxide semiconductor film and interposed between the first oxide semiconductor film and the second insulating film; and

    an electrically conducting film overlapping with the stack of semiconductor films with the second insulating film interposed therebetween,wherein the first crystal structure is a non-wurtzite structure or a deformed structure of a non-wurtzite structure; and

    wherein the second crystal structure is a wurtzite structure.

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