LIGHT EMITTING DEVICE

• US 20140252394A1
• Filed: 04/10/2014
• Published: 09/11/2014
• Est. Priority Date: 02/18/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: BAE, Jung Hyeok, JEONG, Young Kyu, PARK, Kyung Wook, PARK, Duk Hyun
• Granted Patent: US 9,537,056 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: C23C 16/513 using plasma jets
• CPC Class Codes: C23C 4/08 containing only metal elements C23C4/073 takes precedence
• CPC Class Codes: C23C 4/134 Plasma spraying
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/0331 for lift-off processes
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/27 : Manufacturing methods
• CPC Class Codes: H01L 2224/27418 : Spray coating
• CPC Class Codes: H01L 2224/27622 : Photolithography
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/29139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/8381 : involving forming an intermetallic compound at the bonding interface
• CPC Class Codes: H01L 2224/8382 : Diffusion bonding
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/743 : Apparatus for manufacturing layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/074 : Stacked arrangements of non-apertured devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H05H 1/42 : with provisions for introducing materials into the plasma, e.g. powder, liquid arc stabilising or constricting arrangements H05H1/3405; coaxial protecting fluids H05H1/341; electrostatic spraying, spraying apparatus with means for charging the spray electrically B05B5/00 ; cf. B23K9/324, B05B7/22
• CPC Class Codes: H05K 2203/1344 : Spraying small metal particles or droplets of molten metal

Abstract

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Claims

1. A light emitting device comprising:

a conductive support member;

a light emitting structure on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

an electrode layer disposed between the conductive support member and the light emitting structure;

a protective member disposed on a peripheral region of an bottom surface of the light emitting structure;

a first electrode disposed on an upper surface of the first conductive type semiconductor layer, wherein a portion of the first electrode is disposed on a top surface of the protective member; and

an insulation layer disposed between a surface of the light emitting structure and the first electrode,

wherein the protective member includes a first portion between the light emitting structure and the electrode layer and a second portion between the electrode layer and the portion of the first electrode, and

wherein the portion of the first electrode is vertically overlapped with the second portion of the protective member.

2. The light emitting device of claim 1, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

3. The light emitting device of claim 2, wherein the portion of the first electrode is located at a higher position that that of a top surface of the reflective layer.

4. The light emitting device of claim 1, further comprising a bonding layer disposed on the second portion of the protective member and connected to the portion of the first electrode.

5. The light emitting device of claim 4, wherein the bonding layer is located at a higher position that that of the bottom surface of the light emitting structure.

6. The light emitting device of claim 1, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member, and an adhesion layer between the reflective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

7. The light emitting device of claim 1, wherein the first electrode comprises a first portion on a top surface of the first conductive type semiconductor layer, a second portion on a top surface of the second portion of the protective member, and a third portion connected between the first and second portions.

8. The light emitting device of claim 7, wherein the third portion of the first electrode is disposed on a side surface of the light emitting structure and is vertically overlapped with the first portion of the protective member.

9. The light emitting device of claim 1, wherein the first electrode includes an opening and a portion of the upper surface the first conductive type semiconductor layer is exposed through the opening of the first electrode.

10. The light emitting device of claim 9, wherein the second portion of the protective member is exposed through the opening of the first electrode.

11. The light emitting device of claim 1, wherein the first electrode includes a plurality of line electrodes contacted with an at least one of the upper surface the first conductive type semiconductor layer and the insulation layer.

12. A light emitting device comprising:

a conductive support member;

a light emitting structure on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

an electrode layer including plurality of conductive layers between the conductive support member and the light emitting structure;

a protective member disposed on a peripheral region of an bottom surface of the light emitting structure;

a first electrode disposed on an upper surface of the first conductive type semiconductor layer, wherein a portion of the first electrode is disposed on a top surface of the protective member; and

an insulation layer disposed between a surface of the light emitting structure and the first electrode,

wherein the protective member includes a first portion between the light emitting structure and the electrode layer and a second portion between the electrode layer and the portion of the first electrode,

wherein the portion of the first electrode is vertically overlapped with the second portion of the protective member, and

wherein a side surface of the light emitting structure includes an inclined structure.

13. The light emitting device of claim 12, wherein the first electrode includes at least one of metal material and a transparent material.

14. The light emitting device of claim 12, further comprising a bonding layer on the portion of the first electrode,

wherein the first electrode includes a different material from the bonding layer.

15. The light emitting device of claim 14, wherein the bonding layer is disposed on the second portion of the protective member and is connected to the portion of the first electrode.

16. The light emitting device of claim 12, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

17. The light emitting device of claim 12, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member, and an adhesion layer between the reflective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

18. The light emitting device of claim 12, wherein the first electrode comprises a first portion on a top surface of the first conductive type semiconductor layer, a second portion contacted with a top surface of the second portion of the protective member, and a third portion connected between the first and second portions,

wherein the third portion of the first electrode is contacted with the insulation layer.

19. The light emitting device of claim 18, wherein the third portion of the first electrode is disposed on a side surface of the light emitting structure and is vertically overlapped with the first portion of the protective member.

20. The light emitting device of claim 12, further comprising a connection electrode connected to the first electrode and disposed on a sidewall of the conductive support member, and an insulating body disposed on the sidewall of the conductive support member and the connection electrode.