HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING

• US 20140252396A1
• Filed: 05/19/2014
• Published: 09/11/2014
• Est. Priority Date: 12/09/2003
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Japan Science & Technology Trading Co. Limited, Regents of the University of California (University of California)
• Inventors: Fujii, Tetsuo, Gao, Yan, Hu, Evelyn L., Nakamura, Shuji
• Granted Patent: US 10,446,714 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Claims

1. A (B, Al, Ga, In) N light emitting diode (LED), comprised of:

a plurality of (B, Al, Ga, In)N layers including at least an n-type layer, an emitting layer, and a p-type layer;

wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, and the N-face surface is comprised of one or more structures, so that the light is scattered or diffracted, in order to increase extraction efficiency of the light out of the N-face surface.

2. The LED of claim 1, wherein the structures have a size close to a wavelength of the light within the LED.

3. The LED of claim 1, wherein the structures have a size not smaller than a wavelength of the light within the LED.

4. The LED of claim 1, wherein the structures comprise cone shapes.

5. The LED of claim 4, wherein the cone shapes comprise etched cones.

6. The LED of claim 5, wherein the etched cones comprise photo-enhanced chemical (PEC) etched cones.

7. The LED of claim 4, wherein the structures comprise hexagonal shaped cones that have an angle equal to or smaller than:

2 sin<sup>−

1</sup>(n_air/n_s)

where n_air is a refractive index of air and n_s is a refractive index of the N-face surface.

8. The LED of claim 1, wherein the light from the emitting layer is extracted from the LED through the N-face surface of the n-type layer.

9. The LED of claim 8, wherein the extraction efficiency of the light out of the N-face surface is increased by more than 100% as compared to an N-face surface without the structures.

10. The LED of claim 1, further comprising a p-type electrode on the p-type layer, wherein the p-type electrode has a property of high reflection to increase light reflection toward the N-face surface.

11. The LED of claim 1, further comprising an n-type electrode on the n-type layer, wherein a current-blocking layer is aligned under the n-type electrode to keep current from concentrating below the n-type electrode, so that absorption of the light under the n-type electrode is avoided and the extraction efficiency of the light is increased.

12. The LED of claim 1, further comprising one or more solder metals deposited on the (B, Al, Ga, In) N layers, wherein the solder metals include gold (Au) and tin (Sn).

13. A method of creating a (B, Al, Ga, In) N light emitting diode (LED), comprising:

fabricating a plurality of (B, Al, Ga, In) N layers including at least an n-type layer, an emitting layer, and a p-type layer;

wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, and the N-face surface is comprised of one or more structures, so that the light is scattered or diffracted, in order to increase extraction efficiency of the light out of the N-face surface.

14. A (B, Al, Ga, In) N light emitting diode(LED), comprised of:

at least an n-type layer, an emitting layer, a p-type layer and a p-type electrode;

wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of the LED and the N-face surface of the LED is comprised of structures that increase extraction efficiency of the light out of the N-face surface of the LED;

wherein the structures comprise a plurality of etched cones; and

wherein the p-type electrode has a property of high reflection to increase light reflection towards the N-face surface.

15. The LED of claim 14, wherein the light from the emitting layer is extracted through the N-face surface of a layer other than the emitting layer of the LED.

16. The LED of claim 15, wherein the light from the emitting layer is extracted through the N-face surface of the n-type layer of the LED.

17. The LED of claim 16, wherein the LED is further comprised of a solder metal which comprises gold (Au).

18. The LED of claim 17, wherein the solder metal is a gold-tin (Au—

Sn).

19. The LED of claim 16, wherein the LED is further comprised of an n-type electrode on the n-type layer, and a current-blocking layer is aligned under the n-type electrode to keep current from concentrating below the n-type electrode, so that absorption of the light under the n-type electrode is avoided and the extraction efficiency of the light is increased.

20. The LED of claim 14 wherein the etched cones are hexagonal shaped cones that have an angle equal to or smaller than:

2 sin<sup>−

1</sup>(n_air/n_s)

where n_air is a refractive index of air and n_s is a refractive index of the N-face surface.