RF Switch Gate Control

  • US 20140253217A1
  • Filed: 03/03/2014
  • Published: 09/11/2014
  • Est. Priority Date: 03/06/2013
  • Status: Abandoned Application
First Claim
Patent Images

1. An RF switch comprising:

  • at least one transistor;

    a gate resistor and a gate control transistor;

    wherein said gate control transistor is parallel connected across said gate resistor;

    and wherein said gate control transistor is configured to reduce resistance between a control terminal of said RF switch and a gate of said at least one transistor when said at least one transistor is in an OFF state.

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