SYSTEMS AND METHODS FOR REMOTE PLASMA ATOMIC LAYER DEPOSITION

• US 20140272185A1
• Filed: 03/12/2013
• Published: 09/18/2014
• Est. Priority Date: 03/12/2013
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Gopinath, Sanjay, Na, Jeong-Seok
• Granted Patent: US 9,255,326 B2
• Time in Patent Office: Days
• US Class Current: 427/535
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors

Abstract

Systems and methods deposit a film on a substrate by introducing a precursor gas into a reaction volume of a processing chamber. A substrate is arranged in the reaction volume. After a predetermined soak period, the precursor gas is purged from the reaction volume. The substrate is exposed with plasma gas using a remote plasma source.

Claims

1. A method for depositing a film on a substrate, comprising:

introducing a precursor gas into a reaction volume of a processing chamber, wherein a substrate is arranged in the reaction volume;

after a predetermined soak period, purging the precursor gas from the reaction volume; and

exposing the substrate with plasma gas using a remote plasma source.

2. The method of claim 1, further comprising:

arranging a plasma dome above a dual plenum showerhead;

locating the substrate on a pedestal in the reaction volume adjacent to the dual plenum showerhead;

supplying the precursor gas to a first plenum defined between first and second plates of the dual plenum showerhead, wherein the precursor gas flows through first distribution holes in the dual plenum showerhead to the reaction volume; and

supplying the plasma gas to a second plenum of the plasma dome, wherein the second plenum is defined between the plasma dome and the dual plenum showerhead, and wherein the plasma gas flows through second distribution holes in the dual plenum showerhead to the reaction volume.

3. The method of claim 2, wherein the plasma gas is generated remotely in the second plenum by:

supplying a process gas to the second plenum;

arranging coils around the plasma dome; and

supplying current to the coils to create the plasma gas in the second plenum.

4. The method of claim 1, further comprising purging the plasma gas from the reaction volume.

5. The method of claim 1, wherein the precursor gas includes one of tantalum, nitrogen and carbon.

6. The method of claim 1, wherein the plasma gas includes one of argon and hydrogen (Ar/H₂), nitrogen and hydrogen (N₂/H₂), nitrogen and ammonia (N₂/NH₃), helium and hydrogen (He/H₂) and/or hydrogen (H₂).

7. The method of claim 1 wherein the plasma gas includes one of nitrogen and hydrogen (N₂/H₂) and nitrogen and ammonia (N₂/NH₃).

8. The method of claim 2, wherein the precursor gas and the plasma gas flow through the dual plenum showerhead using separate paths.

9. The method of claim 1, further comprising:

performing a post plasma treatment using the plasma gas.

10. The method of claim 9, further comprising:

purging the post plasma treatment.

11. The method of claim 1, further comprising:

prior to the exposing the substrate with the plasma gas using the remote plasma source, introducing a reactant gas dose into the reaction volume and purging the reactant gas dose.

12. The method of claim 11, further comprising:

performing a post plasma treatment using the plasma gas.

13. The method of claim 12, further comprising:

purging the post plasma treatment.

14. A substrate processing system for depositing a film on a substrate, comprising:

a processing chamber including a reaction volume;

a substrate arranged on a pedestal in the reaction volume;

a plasma dome;

a dual plenum showerhead arranged between the plasma dome and the reaction volume, wherein a first plenum is defined by the dual plenum showerhead and a second plenum is defined between the plasma dome and the dual plenum showerhead;

a remote plasma source configured to supply plasma gas in the second plenum;

a precursor source supplying a precursor gas to the first plenum, wherein the precursor gas flows from the first plenum through first distribution holes in the dual plenum showerhead to the reaction volume and wherein the plasma gas flows from the second plenum through second distribution holes in the dual plenum showerhead to the reaction volume; and

a controller configured to;

introduce the precursor gas into the reaction volume;

after a predetermined period, purge the precursor gas from the reaction volume; and

expose the substrate to the plasma gas.

15. The substrate processing system of claim 14, wherein the remote plasma source includes:

a gas source to supply a process gas to the second plenum; and

coils arranged around the plasma dome,

wherein the remote plasma source selectively supplies current to the coils to supply the plasma gas to the second plenum.

16. The substrate processing system of claim 14, wherein the controller is configured to purge the plasma gas from the reaction volume.

17. The substrate processing system of claim 14, wherein the precursor gas includes one of tantalum, nitrogen and carbon.

18. The substrate processing system of claim 14, wherein the plasma gas includes one of argon and hydrogen (Ar/H₂), nitrogen and hydrogen (N₂/H₂), nitrogen and ammonia (N₂/NH₃), helium and hydrogen (He/H₂) and/or hydrogen (H₂).

19. The substrate processing system of claim 14, wherein the plasma gas includes one of nitrogen and hydrogen (N₂/H₂) and nitrogen and ammonia (N₂/NH₃).

20. The substrate processing system of claim 14, wherein the controller is configured to perform a post plasma treatment using the plasma gas.

21. The substrate processing system of claim 20, wherein the controller is configured to purge the post plasma treatment.

22. The substrate processing system of claim 14, wherein the controller is configured to, prior to the exposing the substrate with plasma gas using the remote plasma source, introduce a reactant dose into the reaction volume and purging the reactant dose.

23. The substrate processing system of claim 22, wherein the controller is configured to perform a post plasma treatment using the plasma gas.

24. The substrate processing system of claim 23, wherein the controller is configured to purge the post plasma treatment.