FLEXIBLE NEURAL INTERFACES WITH INTEGRATED STIFFENING SHANK

• US 20140277317A1
• Filed: 03/13/2014
• Published: 09/18/2014
• Est. Priority Date: 03/16/2013
• Status: Active Grant

• Current Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Inventors: Tooker, Angela C., Felix, Sarah H., Pannu, Satinderpall S., Shah, Kedar G., Sheth, Heeral, Tolosa, Vanessa
• Granted Patent: US 9,399,128 B2
• Time in Patent Office: Days
• US Class Current: 607/116
• CPC Class Codes: A61B 2503/40 Animals
• CPC Class Codes: A61B 2562/028 Microscale sensors, e.g. electromechanical sensors [MEMS]
• CPC Class Codes: A61B 2562/12 Manufacturing methods specially adapted for producing sensors for in-vivo measurements
• CPC Class Codes: A61B 2562/125 characterised by the manufacture of electrodes
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/4076 Diagnosing or monitoring particular conditions of the nervous system A61B5/4821, A61B5/4824 take precedence
• CPC Class Codes: A61B 5/686 Permanently implanted devices, e.g. pacemakers, other stimulators, biochips A61B5/6861 takes precedence
• CPC Class Codes: A61B 5/6867 specially adapted to be attached or implanted in a specific body part A61B5/6847 takes precedence
• CPC Class Codes: A61B 5/6868 Brain
• CPC Class Codes: A61B 5/6877 Nerve
• CPC Class Codes: A61N 1/0529 Electrodes for brain stimulation
• CPC Class Codes: A61N 1/0551 Spinal or peripheral nerve electrodes
• CPC Class Codes: A61N 1/3605 Implantable neurostimulators for stimulating central or peripheral nerve system

Abstract

A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

Claims

1. A method of fabricating a neural interface device having a top and a bottom, comprising the steps of:

depositing a bottom dielectric material on a substrate;

etching openings in the bottom dielectric material for bottom electrodes;

depositing and patterning bottom electrodes;

depositing and patterning a bottom interconnection trace metal;

depositing an interlayer dielectric material;

depositing a stiffening shank material;

depositing an interlayer dielectric material;

patterning a stiffening shank from the stiffening shank material;

depositing an interlayer dielectric material; and

releasing the device from said substrate.

2. The method of fabricating a neural interface device having a top and a bottom of claim 1 wherein the device has a surface and wherein said steps of etching openings in the bottom dielectric material for bottom electrodes and depositing and patterning bottom electrodes are implemented so that the bottom electrodes are flush with said surface of the device.

3. The method of fabricating a neural interface device having a top and a bottom of claim 1 wherein the device has a surface and wherein said steps of etching openings in the bottom dielectric material for bottom electrodes and depositing and patterning bottom electrodes are implemented so that the bottom electrodes are recessed from said surface of the device.

4. The method of fabricating a neural interface device having as top and a bottom of claim 1 wherein said step of depositing and patterning bottom electrodes comprises depositing and patterning metal bottom electrodes.

5. The method of fabricating a neural interface device having as top and a bottom of claim 1 wherein said step of depositing and patterning bottom electrodes comprises depositing and patterning conducting polymer bottom electrodes.

6. The method of fabricating a neural interface device having a top and a bottom of claim 1 further comprising the steps of

depositing and patterning a top interconnection trace metal;

depositing and patterning top electrodes;

depositing a top dielectric material; and

etching openings in the top dielectric material for the top electrodes and connector openings.

7. The method of fabricating a neural interface device having a top and a bottom of claim 1 further comprising the steps of depositing and patterning at least one additional bottom interconnection trace metal.

8. A method of fabricating a neural interface device having a top and a bottom, comprising the steps of:

depositing a bottom dielectric material on a substrate;

depositing a stiffening shank material;

depositing an interlayer dielectric material;

patterning a stiffening shank from the stiffening shank material;

depositing an interlayer dielectric material;

depositing and patterning a top interconnection trace metal;

depositing and patterning top electrodes;

depositing a top dielectric material; and

etching openings in the top dielectric material for the top electrodes and connector openings; and

releasing the device from said substrate.

9. The method of fabricating a neural interface device having a top and a bottom of claim 8 wherein the device has a surface and wherein said steps of etching openings in the top dielectric material for top electrodes and depositing and patterning top electrodes are implemented so that the top electrodes are flush with said surface of the device.

10. The method of fabricating a neural interface device having a top and a bottom of claim 8 wherein the device has a surface and wherein said steps of etching openings in the bottom dielectric material for bottom electrodes and depositing and patterning bottom electrodes are implemented so that the bottom electrodes are recessed from said surface of the device.

11. The method of fabricating a neural interface device having a top and a bottom of claim 8 wherein said step of depositing and patterning top electrodes comprises depositing and patterning metal top electrodes.

12. The method of fabricating a neural interface device having a top and a bottom of claim 8 wherein said step of depositing and patterning top electrodes comprises depositing and patterning conducting polymer top electrodes.

13. The method of fabricating a neural interface device having a top and a bottom of claim 8 further comprising the steps of

etching openings in the bottom dielectric material for bottom electrodes;

depositing and patterning bottom electrodes;

depositing and patterning a bottom interconnection trace metal;

depositing an interlayer dielectric material.

14. The method of fabricating a neural interface device having a top and a bottom of claim 8 further comprising the steps of depositing and patterning at least one additional top interconnection trace metal.

15. A method of fabricating a neural interface device having a top and a bottom, comprising the steps of:

depositing a bottom dielectric material on a substrate;

etching openings in the bottom dielectric material for bottom electrodes;

depositing and patterning bottom electrodes;

depositing and patterning a bottom interconnection trace metal;

depositing an interlayer dielectric material;

depositing a stiffening shank material;

depositing an interlayer dielectric material;

patterning a stiffening shank from the stiffening shank material;

depositing an interlayer dielectric material;

depositing and patterning a top interconnection trace metal;

depositing and patterning top electrodes;

depositing a top dielectric material;

etching openings in the top dielectric material for the top electrodes and connector openings; and

releasing the device from said substrate.

16. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein the device has a surface and wherein said steps of etching openings in the bottom dielectric material for bottom electrodes and depositing and patterning bottom electrodes are implemented so that the bottom electrodes are flush with said surface of the device.

17. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein the device has a surface and wherein said steps of depositing and patterning top electrodes and etching openings in the top dielectric material for the top electrodes and connector openings are implemented so that the bottom electrodes are recessed from said surface of the device.

18. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein said step of depositing and patterning bottom electrodes comprises depositing and patterning metal bottom electrodes.

19. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein said step of depositing and patterning bottom electrodes comprises depositing and patterning conducting polymer bottom electrodes.

20. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein said step of depositing and patterning top electrodes comprises depositing and patterning metal top electrodes.

21. The method of fabricating a neural interface device having a top and a bottom of claim 15 wherein said step of depositing and patterning top electrodes comprises depositing and patterning conducting polymer top electrodes.

22. The method of fabricating a neural interface device having a top and a bottom of claim 15 further comprising the steps of depositing and patterning at least one additional bottom interconnection trace metal.

23. The method of fabricating a neural interface device having a top and a bottom of claim 15 further comprising the steps of depositing and patterning at least one additional top interconnection trace metal.

24. A neural interface device, comprising:

a first dielectric material having at least one first opening for a first electrical conducting material;

a first electrical conducting material in said first opening;

at least one first interconnection trace electrical conducting material connected to said first electrical conducting material; and

a stiffening shank material adjacent said first dielectric material, said first electrical conducting material, and said first interconnection trace electrical conducting material.

25. The neural interface device of claim 24 wherein said first electrical conducting material in said first opening is an electrode.

26. The neural interface device of claim 24 wherein said first electrical conducting material in said first opening is an electrode made of metal.

27. The neural interface device of claim 24 wherein said first electrical conducting material in said first opening is an electrode made of a conducting polymer.

28. The neural interface device of claim 24 wherein said first electrical conducting material in said first opening is an interconnection trace electrical conducting material.

29. The neural interface device of claim 24 wherein said at least one first interconnection trace electrical conducting material connected to said first electrical conducting material comprises a multiplicity of first interconnection trace electrical conducting material connected to said first electrical conducting material.

30. The neural interface device of claim 24 wherein the neural interface device has a first side and a second side;

wherein said first dielectric material, said first electrical conducting material, and said first interconnection trace electrical conducting material are located on said first side of the neural interface device; and

further comprising

a second dielectric material having at least one second opening for a second electrical conducting material;

a second electrical conducting material in said second opening; and

at least one second interconnection trace electrical conducting material connected to said second electrical conducting material;

wherein said second dielectric material, said second electrical conducting material, and said second interconnection trace electrical conducting material are located on said second side of the neural interface device.

31. The neural interface device of claim 24 wherein said second electrical conducting material in said second opening is an electrode made of metal.

32. The neural interface device of claim 24 wherein said second electrical conducting material in said second opening is an electrode made of a conducting polymer.

33. The neural interface device of claim 24 wherein said second electrical conducting material in said second opening is an interconnection trace electrical conducting material.

34. The neural interface device of claim 24 wherein said second interconnection trace electrical conducting material connected to said second electrical conducting material comprises a multiplicity of second interconnection trace electrical conducting material connected to said second electrical conducting material.