NANOSCALE ARRAY STRUCTURES SUITABLE FOR SURFACE ENHANCED RAMAN SCATTERING AND METHODS RELATED THERETO

• US 20140335269A1
• Filed: 06/11/2014
• Published: 11/13/2014
• Est. Priority Date: 12/02/2009
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois, Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Inventors: BOND, Tiziana C., MILES, Robin, DAVIDSON, James C., LIU, Gang Logan
• Granted Patent: US 9,080,981 B2
• Time in Patent Office: Days
• US Class Current: 427/162
• CPC Class Codes: B81C 1/00373 Selective deposition, e.g. printing or microcontact printing
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01N 21/01 Arrangements or apparatus for facilitating the optical investigation
• CPC Class Codes: G01N 21/658 enhancement Raman, e.g. surface plasmons

Abstract

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Claims

1-22. -22. (canceled)

23. A method for fabricating a structure, the method comprising:

providing a planar substrate;

coating the planar substrate with a polymer layer;

annealing the polymer layer, wherein the annealing causes a microphase separation of the polymer layer into first portions and second portions, the first portions being an array of nanostructures surrounded by the second portions, the second portions being a polymer matrix;

removing the array of nanostructures, whereby the removing forms an array of nanorecesses and the removing exposes portions of the planar substrate below the removed nanostructures; and

coating a first metal on the polymer matrix and the exposed portions of the planar substrate.

24. The method of claim 23, wherein the nanostructures have a substantially spherical, cylindrical, or lamellar shape.

25. The method of claim 23, wherein the polymer layer is block copolymer.

26. The method of claim 23, wherein the polymer layer is polystyrene-poly(methyl methacrylate).

27. The method of claim 23, wherein the planar substrate is selected from the group consisting of:

silicon dioxide, fused silica, sapphire, silicon, and compound semiconductors.

28. The method of claim 23, wherein the first metal is selected from the group consisting of:

silver, gold, aluminum, iridium platinum, palladium and copper.

29. The method of claim 23, wherein size, spacing, and height of the array of nanostructures and size, spacing, and depth of the first metal covering at least a portion of each nanorecess is configured to enable surface enhancement of Raman scattering (SERS).

30. The method of claim 23, wherein the structure is a SERS substrate.

31. The method of claim 23, the method further comprising:

removing the polymer matrix of the polymer layer and a portion of the first metal on the polymer matrix, wherein a remaining portion of the first metal forms an array of metal islands on the planar substrate;

annealing the array of metal islands whereby the array of metal islands forms an array of metal drops on the planar substrate;

removing portions of the planar substrate not covered by the array of metal drops whereby the removing forms a nanopillar under each metal drop of the array of metal drops;

coating a second metal on the substrate and the array of metal drops; and

annealing the second metal, whereby the array of metal drops coated with the second metal undergoes shape change.

32. The method of claim 31, wherein size, gap width, and height of the array of the nanopillars and size, gap width and height of the metal drop of the array of metal drops is configured to enable surface enhancement of Raman scattering (SERS).

33. The method of claim 31, wherein a gap width between the metal drops of the array of metal drops is less than approximately 50 nm.

34. The method of claim 31, wherein a gap width between the metal drops of the array of metal drops is less than approximately 10 nm.

35. The method of claim 31, wherein the structures is a SERS substrate.

36. A method for fabricating a structure, the method comprising:

providing a planar substrate;

coating a photoresist layer on the planar substrate;

exposing the photoresist layer with laser light, the laser light forming a spatial interference pattern on the photoresist layer;

developing the photoresist layer to form an array of photoresist islands according to the spatial interference pattern;

removing portions of the planar substrate not covered by the array of photoresist islands, wherein the removing forms an array of tapered nanopillars on the planar substrate;

removing the array of photoresist islands; and

coating a metal layer on the array of tapered nanopillars.

37. The method of claim 36, wherein size, pitch, and height of the array of tapered nanopillar and thickness of the metal layer is configured to enable surface enhancement of Raman scattering (SERS).

38. The method of claim 36, wherein laser light is produced from a single laser light source, the single laser light source split into two laser beams, the two laser beams being recombined to form the spatial interference pattern.

39. The method of claim 36, further comprising providing an antireflective layer on the planar substrate,

wherein the coating the photoresist layer comprises coating an antireflective layer on the planar substrate and then coating the photoresist layer on the antireflective layer;

wherein the removing portions of the planar substrate comprises removing portions of the antireflective layer and portions of the planar substrate not covered by the array of the photoresist islands; and

wherein removing the array of photoresist islands comprises removing the array of photoresist islands and the antireflective layer underlying the array of photoresist islands.

40. The method of claim 36, wherein the structure is a SERS substrate.

41-44. -44. (canceled)