METHOD OF TESTING SEMICONDUCTOR DEVICE
First Claim
1. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure, said method comprising:
- a first test step of testing dielectric strength of said semiconductor device;
a charge removal step of, after said first test step, removing charge from a top surface layer of said termination structure, said top surface layer being located on said substrate and formed of an insulating film or a semi-insulating film; and
a second test step of, after said charge removal step, testing dielectric strength of said semiconductor device.
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Abstract
A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, the cell structure having a main current flowing therethrough, the termination structure surrounding the cell structure, the method includes a first test step of testing dielectric strength of the semiconductor device, a charge removal step of, after the first test step, removing charge from a top surface layer of the termination structure, the top surface layer being located on the substrate and formed of an insulating film or a semi-insulating film, and a second test step of, after the charge removal step, testing dielectric strength of the semiconductor device.
9 Citations
12 Claims
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1. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure, said method comprising:
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a first test step of testing dielectric strength of said semiconductor device; a charge removal step of, after said first test step, removing charge from a top surface layer of said termination structure, said top surface layer being located on said substrate and formed of an insulating film or a semi-insulating film; and a second test step of, after said charge removal step, testing dielectric strength of said semiconductor device. - View Dependent Claims (2, 10, 11, 12)
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3. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure and having on a top surface thereof a top surface layer formed of an insulating film or a semi-insulating film, said method comprising:
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a charge removal step of removing charge from said top surface layer; and a test step of, after said charge removal step, testing dielectric strength of said semiconductor device. - View Dependent Claims (4, 5, 6, 7)
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8. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure and having on a top surface thereof a top surface layer which is formed of an insulating film or a semi-insulating film and which is covered with a sealing material, said method comprising:
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a sealing material removal step of removing said sealing material to expose said top surface layer; and a charge removal step of, after said sealing material removal step, removing charge from said top surface layer. - View Dependent Claims (9)
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Specification