METHOD FOR FILLING TRENCH WITH METAL LAYER AND SEMICONDUCTOR STRUCTURE FORMED BY USING THE SAME
First Claim
1. A method for filling a trench with a metal layer, comprising:
- providing a deposition apparatus;
providing a substrate and a dielectric layer disposed thereon, wherein the dielectric layer includes a trench;
performing a first deposition process to fill the trench with a metal layer , wherein a temperature of the substrate is ramped up to a predetermined temperature in the first deposition process; and
performing a second deposition process when the temperature of the substrate reaches the predetermined temperature, so as to completely fill the trench with the metal layer.
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Accused Products
Abstract
A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.
3 Citations
15 Claims
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1. A method for filling a trench with a metal layer, comprising:
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providing a deposition apparatus; providing a substrate and a dielectric layer disposed thereon, wherein the dielectric layer includes a trench; performing a first deposition process to fill the trench with a metal layer , wherein a temperature of the substrate is ramped up to a predetermined temperature in the first deposition process; and performing a second deposition process when the temperature of the substrate reaches the predetermined temperature, so as to completely fill the trench with the metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification