METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20140377947A1
• Filed: 01/24/2013
• Published: 12/25/2014
• Est. Priority Date: 01/25/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ishizaka, Tadahiro, Gomi, Atsushi, Suzuki, Kenji, Hatano, Tatsuo, Mizusawa, Yasushi
• Granted Patent: US 9,576,850 B2
• Time in Patent Office: Days
• US Class Current: 438/654
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru₃(CO)₁₂ gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

Claims

1. A method for manufacturing a semiconductor device, comprising:

adsorbing boron atoms onto a hydrophobic surface of an insulating film containing silicon, carbon, hydrogen and oxygen, which is formed on a substrate and includes a recess formed in the insulating film to expose a conductive path of a lower layer side at a bottom portion thereof, by supplying a gas of a boron compound to the insulating film;

forming an adherence film made of a ruthenium (Ru) film directly on the surface of the insulating film onto which the boron atoms are adsorbed; and

filling copper serving as a conductive path in the recess.

2. The method of claim 1, wherein the boron compound is one selected from monoborane (BH₃), diborane (B₂H₆), trimethylborane (B(CH₃)₃), triethylborane (B(C₂H₅)₃), dicarbadodecaborane (C₂B₁₀H₁₂) and decaborane (B₁₀H₁₄).

7. The method of claim 1, further comprising, before adsorbing the boron atoms onto the surface of the insulating film,

removing, from the insulating film, a hydrophilic surface portion that is formed as carbon is eliminated during formation of the recess using plasma etching.

3. A method for manufacturing a semiconductor device, comprising:

adsorbing silicon atoms onto a hydrophobic surface of an insulating film containing silicon, carbon, hydrogen and oxygen, which is formed on a substrate and includes a recess formed in the insulating film to expose a conductive path of a lower layer side at a bottom portion thereof, by supplying a gas of a silicon compound to the insulating film;

forming an adherence film made of a ruthenium (Ru) film directly on the surface of the insulating film onto which the silicon atoms are adsorbed; and

filling copper serving as a conductive path in the recess.

4. The method of claim 3, wherein the silicon compound is one selected from monosilane (SiH₄) and disilane (Si₂H₆).

8. The method of claim 3, further comprising, before adsorbing the silicon atoms onto the surface of the insulating film,

removing, from the insulating film, a hydrophilic surface portion that is formed as carbon is eliminated during formation of the recess using plasma etching.

5. A method for manufacturing a semiconductor device, comprising:

adsorbing aluminum atoms onto a hydrophobic surface of an insulating film containing silicon, carbon, hydrogen and oxygen, which is formed on a substrate and includes a recess formed in the insulating film to expose a conductive path of a lower layer side at a bottom portion thereof, by supplying a gas of an organic compound containing aluminum to the insulating film;

forming an adherence film made of a ruthenium (Ru) film directly on the surface of the insulating film onto which the aluminum atoms are adsorbed; and

filling copper serving as a conductive path in the recess.

6. The method of claim 5, wherein the organic compound containing aluminum is trimethyl aluminum.

9. The method of claim 5, further comprising, before adsorbing the aluminum atoms onto the surface of the insulating film,

removing, from the insulating film, a hydrophilic surface portion that is formed as carbon is eliminated during formation of the recess using plasma etching.