DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE

• US 20150014681A1
• Filed: 07/07/2014
• Published: 01/15/2015
• Est. Priority Date: 07/12/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 9,818,763 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

Claims

1. A display device comprising:

a transistor over a flexible substrate, the transistor comprising an oxide semiconductor film having a light-transmitting property;

a capacitor over the flexible substrate, the capacitor comprising a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode; and

an insulating film covering the oxide semiconductor film,

wherein the capacitor comprises a region where the first electrode and the dielectric film are in contact with each other, and

wherein the insulating film does not cover the region.

2. The display device according to claim 1, wherein the first electrode is provided on a same surface as the oxide semiconductor film.

3. The display device according to claim 1, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

4. The display device according to claim 1, wherein the first electrode comprises indium, gallium, zinc, and hydrogen.

5. The display device according to claim 1, further comprising a third electrode overlapping with the oxide semiconductor film, the third electrode comprising a same element as the second electrode.

6. The display device according to claim 1, wherein the transistor is a channel-etched transistor.

7. A display device comprising:

a transistor over a flexible substrate, the transistor comprising an oxide semiconductor film having a light-transmitting property;

a capacitor over the flexible substrate, the capacitor comprising a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode;

a light-emitting element over the flexible substrate; and

an insulating film covering the oxide semiconductor film,

wherein the capacitor comprises a region where the first electrode and the dielectric film are in contact with each other, and

wherein the insulating film does not cover the region.

8. The display device according to claim 7, wherein the first electrode is provided on a same surface as the oxide semiconductor film.

9. The display device according to claim 7, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

10. The display device according to claim 7, wherein the first electrode comprises indium, gallium, zinc, and hydrogen.

11. The display device according to claim 7, further comprising a third electrode overlapping with the oxide semiconductor film, the third electrode comprising a same element as the second electrode.

12. The display device according to claim 7, wherein the transistor is a channel-etched transistor.

13. The display device according to claim 7, wherein the light-emitting element is configured to emit white light.

14. The display device according to claim 7, further comprising a coloring layer overlapping with the light-emitting element.

15. The display device according to claim 7, wherein the display device has a top-emission structure.

16. The display device according to claim 7, wherein the display device has a bottom-emission structure.

17. A display device comprising:

a transistor comprising;

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate electrode with the gate insulating film interposed therebetween;

a source electrode and a drain electrode in contact with the oxide semiconductor film; and

an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;

a capacitor comprising;

a first electrode over the substrate, the first electrode having a light-transmitting property and being electrically connected to one of the source electrode and the drain electrode of the transistor;

a dielectric film in contact with the first electrode, the dielectric film comprising silicon, nitride, and hydrogen; and

a second electrode over the dielectric film;

a planarization film over the insulating film and the second electrode, the planarization film having a contact hole; and

a pixel electrode over the planarization film and in the contact hole,

wherein the insulating film does not overlap with a region where the first electrode and the dielectric film are in contact with each other.

18. The display device according to claim 17, wherein the first electrode is provided on a same surface as the oxide semiconductor film.

19. The display device according to claim 17, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

20. The display device according to claim 17, wherein the first electrode comprises indium, gallium, zinc, and hydrogen.

21. The display device according to claim 17, further comprising a third electrode overlapping with the oxide semiconductor film, the third electrode comprising a same element as the second electrode.

22. The display device according to claim 17, wherein the transistor is a channel-etched transistor.

23. The display device according to claim 17, wherein the light-emitting element is configured to emit white light.

24. The display device according to claim 17, further comprising a coloring layer overlapping with the light-emitting element.

25. The display device according to claim 17, wherein the display device has a top-emission structure.

26. The display device according to claim 17, wherein the display device has a bottom-emission structure.

27. The display device according to claim 17, wherein the substrate is flexible.