SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20150017750A1
• Filed: 10/02/2014
• Published: 01/15/2015
• Est. Priority Date: 06/03/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugizaki, Yoshiaki, Shibata, Hideki, Kojima, Akihiro, Ishikawa, Masayuki, Tamura, Hideo, Komatsu, Tetsuro
• Granted Patent: US 9,620,669 B2
• Time in Patent Office: Days
• US Class Current: 438/27
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Claims

1. A method for manufacturing a semiconductor light emitting device, comprising:

forming a first interconnect layer in a first opening of an insulating layer and on a surface of the insulating layer on a side opposite to a semiconductor layer, the insulating layer being provided on a second major surface side of the semiconductor layer which is provided on a substrate with being separated into pieces by a separating trench and includes a light emitting layer, a first major surface on the substrate side, and the second major surface opposite to the first major surface, the first opening which reaches a first electrode provided on the second major surface;

forming a second interconnect layer in a second opening of the insulating layer and on the surface of the insulating layer on the side opposite to the semiconductor layer, the second opening which reaches a second electrode provided on the second major surface;

forming a first metal pillar on a face of the first interconnect layer on a side opposite to the first electrode;

forming a second metal pillar on the face of the second interconnect layer on the side opposite to the second electrode;

forming a resin layer between a side face of the first metal pillar and a side face of the second metal pillar;

dicing the insulating layer and the resin layer at a position of the separating trench to divide a light emitting chip into pieces, the light emitting chip including the semiconductor layer, the first electrode, the second electrode, the insulating layer, the first interconnect layer, the second interconnect layer, the first metal pillar, the second metal pillar, and the resin layer;

placing the plurality of light emitting chips on a fluorescent material layer at a second pitch with the first major surface facing the fluorescent material layer, the second pitch being larger than a first pitch on the substrate; and

dicing a portion of the fluorescent material layer between the plurality of light emitting chips.

2. The method of claim 1, wherein a dicing width of a trench formed by dicing the fluorescent material layer is smaller than the second pitch.

3. The method of claim 1, wherein

the placing of the plurality of light emitting chips on the fluorescent material layer includes:

attaching the plurality of light emitting chips placed at the first pitch to a stretchable tape;

stretching the tape to widen a pitch between the plurality of light emitting chips from the first pitch to the second pitch; and

forming the fluorescent material layer on the first major surface side of each of the plurality of light emitting chips placed at the second pitch so as to be connected between the plurality of light emitting chips.

4. The method of claim 3, wherein the fluorescent material layer in a film form is attached to the plurality of light emitting chips placed at the second pitch.

5. The method of claim 4, wherein

the forming of the fluorescent material layer includes:

attaching a first fluorescent material layer in a film form onto the first major surface; and

forming a second fluorescent material layer on the first fluorescent material layer, the second fluorescent material layer having a fluorescence peak wavelength different from a fluorescence peak wavelength of the first fluorescent material layer.

6. The method of claim 5, further comprising:

forming a recessed portion in a portion of the first fluorescent material layer between the plurality of light emitting chips,

the second fluorescent material layer being formed on the first fluorescent material layer so as to be filled into the recessed portion.

7. The method of claim 1, wherein

the forming of the fluorescent material layer includes:

supplying a liquid transparent resin on the first major surface of each of the plurality of light emitting chips placed at the second pitch and in a portion between the plurality of light emitting chips, fluorescent materials being dispersed in the transparent resin; and

curing the transparent resin after the supplying of the transparent resin.

8. A method for manufacturing a semiconductor light emitting device, comprising:

placing a plurality of light emitting chips on a support, each of the plurality of light emitting chips including a semiconductor layer, a first electrode, and second electrode, the semiconductor layer including a light emitting layer, a first major surface, and a second major surface opposite to the first major surface;

forming a fluorescent material layer on the first major surface of each of the plurality of light emitting chips and in a portion between the plurality of light emitting chips; and

dicing a portion of the fluorescent material layer between the plurality of light emitting chips.

9. The method of claim 8, wherein the forming of the fluorescent material layer includes applying the fluorescent material layer in liquid form on the first major surface of each of the plurality of light emitting chips and in the portion between the plurality of light emitting chips.

10. The method of claim 9, wherein the forming of the fluorescent material layer includes curing the fluorescent material layer in liquid form after the applying the fluorescent material layer.

11. The method of claim 8, wherein the fluorescent material layer has a transparent resin and a fluorescent material dispersed in the transparent resin.

12. The method of claim 8, wherein the forming of the fluorescent material layer includes filling the fluorescent material layer into the portion between the plurality of light emitting chips.

13. The method of claim 8, wherein the fluorescent material layer covers the first major surface and a side surface of each of the plurality of light emitting chips.

14. The method of claim 8, wherein the fluorescent material layer covers entire the first major surface and a side surface of each of the plurality of light emitting chips.

15. The method of claim 8, wherein the fluorescent material layer covers each of the plurality of light emitting chips expect for a mounting face.

16. The method of claim 8, further comprising forming the semiconductor layer on a substrate by crystal growth.

17. The method of claim 16, wherein the substrate is a sapphire substrate.

18. The method of claim 16, further comprising removing the substrate before the forming the fluorescent material layer.

19. The method of claim 16, further comprising grounding the substrate before the forming the fluorescent material layer.

20. The method of claim 8, wherein the plurality of light emitting chips have a substrate.

21. The method of claim 20, wherein the substrate is a sapphire substrate.

22. The method of claim 8, wherein a dicing width of a trench formed by dicing the fluorescent material layer is smaller than a pitch of the plurality of light emitting chips.

23. The method of claim 8, wherein the portion of the fluorescent material layer is diced without being diced the support on which the plurality of light emitting chips are placed.