System, Structure, and Method of Manufacturing a Semiconductor Substrate Stack

  • US 20150024546A1
  • Filed: 10/06/2014
  • Published: 01/22/2015
  • Est. Priority Date: 05/14/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • etching a front-face of a first substrate to create a through substrate via (TSV), at a step before contact etch;

    forming at least a first contact between the TSV and an interconnect layer;

    forming at least a second contact between an active region and the interconnect layer;

    thinning a backside of the first substrate to expose the TSV;

    filling the TSV with a conductive material; and

    disposing a backside bonding pad, wherein the backside bonding pad is electrically coupled to the TSV.

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