SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20150028467A1
• Filed: 10/10/2014
• Published: 01/29/2015
• Est. Priority Date: 10/01/2012
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: YOKOYAMA, Takeshi, OCHIAI, Masaaki, MARUYAMA, Atsushi, SEKI, Tomonori, MATSUNAGA, Shinichiro
• Granted Patent: US 9,953,961 B2
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85801 Soldering or alloying
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/49513 having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49524 the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/206 : Length ranges

Abstract

A semiconductor device can reduce the number of bonding wires. The semiconductor device includes two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface, an electrode plate that has one surface which is bonded to electrodes on the first main surfaces of the semiconductor elements, with a first bonding material layer interposed therebetween, and extends over the electrodes on the first main surfaces of the two or more semiconductor elements, and a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to electrodes on the second main surfaces of the semiconductor elements. A second bonding material layer is interposed therebetween, and is connected to the electrodes on the second main surfaces of the two or more semiconductor elements.

Claims

1. A semiconductor device comprising:

two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface;

an electrode plate that has one surface which is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween;

a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the two or more semiconductor elements, with a second bonding material layer interposed therebetween; and

a second lead terminal that is connected to another surface of the electrode plate by a bonding wire.

2. The semiconductor device according to claim 1,

wherein the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, the electrode plate, and the bonding wire are sealed by a molding resin.

3. The semiconductor device according to claim 1,

wherein a space which is surrounded by the semiconductor elements, the electrode plate, and the conductive plate is filled with a resin.

4. The semiconductor device according to claim 1,

wherein the electrode plate includes an insulating substrate, wiring lines which are provided on two main surfaces of the insulating substrate, and a conductive member which is provided in a through hole formed in the insulating substrate and electrically connects the wiring lines on the two main surfaces of the insulating substrate.

5. The semiconductor device according to claim 1,

wherein the electrode plate is made of Cu or Al, or alloys including Cu or Al.

6. The semiconductor device according to claim 5,

wherein the electrode plate has convex portions provided on the one surface, and

the convex portions are provided on a bonding portion to the first main surfaces of the semiconductor elements.

7. A method for manufacturing the semiconductor device according to claim 1, comprising:

a first bonding material layer forming step of forming the first bonding material layer on the one surface of the electrode plate;

a first bonding step of arranging and bonding the first main surfaces of the two or more semiconductor elements to the first bonding material layer;

a second bonding material layer forming step of forming the second bonding material layer on the semiconductor element bonding portion of the conductive plate;

a second bonding step of arranging and bonding the second main surfaces of the semiconductor elements bonded to the electrode plate to the second bonding material layer;

a wire bonding step of connecting the other surface of the electrode plate and the second lead terminal with the bonding wire after the second bonding step; and

a molding step of sealing the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, the electrode plate, and the bonding wire with a molding resin.

8. The method for manufacturing the semiconductor device according to claim 7, further comprising:

a resin filling step of injecting a resin into a space which is surrounded by the semiconductor elements, the electrode plate, and the conductive plate between the second bonding step and the wire bonding step and hardening the resin.

19. The semiconductor device according to claim 3,

wherein the resin is a thermosetting resin.

20. The semiconductor device according to claim 1,

wherein the first bonding material layer or the second bonding material layer is solder paste or silver-based conductive paste.

9. A semiconductor device comprising:

two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface;

an electrode plate that includes a first lead terminal and a bonding portion which is formed on one surface and is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween; and

a conductive plate that includes a second lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the two or more semiconductor elements, with a second bonding material layer interposed therebetween,

wherein the semiconductor elements are arranged such that a longitudinal direction thereof is parallel to the second lead terminal.

10. The semiconductor device according to claim 9,

wherein the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, and the bonding portion of the electrode plate are sealed by a molding resin, and

the first lead terminal of the electrode plate and the second lead terminal of the conductive plate are external terminals.

11. The semiconductor device according to claim 9,

wherein a space which is surrounded by the semiconductor elements, the one surface of the electrode plate, and the conductive plate is filled with a resin.

17. The semiconductor device according to claim 9,

wherein the electrode plate is made of Cu, Al, or alloys including Cu and Al.

18. A method for manufacturing the semiconductor device according to claim 11, comprising:

a first bonding material layer forming step of forming the first bonding material layer on the bonding portion of the electrode plate;

a first bonding step of arranging and bonding the first main surfaces of the two or more semiconductor elements to the first bonding material layer;

a second bonding material layer forming step of forming the second bonding material layer on the semiconductor element bonding portion of the conductive plate;

a second bonding step of arranging and bonding the second main surfaces of the semiconductor elements bonded to the electrode plate to the second bonding material layer;

a resin filling step of injecting a resin into a space which is surrounded by the semiconductor elements, the electrode plate, and the conductive plate and hardening the resin; and

a molding step of sealing the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, and the bonding portion of the electrode plate with a molding resin.

12. A semiconductor device comprising:

two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface;

an electrode plate that includes a bonding portion which is formed on one surface and is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween, and extends from the bonding portion through a bent portion;

a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the semiconductor elements, with a second bonding material layer interposed therebetween, and is connected to the second main surfaces of the two or more semiconductor elements; and

a second lead terminal that is bonded to the connection portion of the electrode plate, with a third bonding material layer interposed therebetween,

wherein the semiconductor elements are arranged such that a longitudinal direction thereof is parallel to the first lead terminal.

13. The semiconductor device according to claim 12,

wherein the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, and the bonding portion of the electrode plate are sealed by a molding resin, and

the first lead terminal of the conductive plate and the second lead terminal are external terminals.

14. The semiconductor device according to claim 12,

wherein a space which is surrounded by the semiconductor elements, the one surface of the electrode plate, and the conductive plate is filled with a resin.

15. A semiconductor device comprising:

two or more semiconductor elements, each of which has electrodes on a first main surface and a second main surface and is arranged such that a longitudinal direction thereof is parallel to an injection direction of a molding resin sealing;

an electrode plate that includes a first lead terminal and a bonding portion which is formed on one surface, is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween, extends over the first main surfaces of the semiconductor elements, and has convex portions formed in bonding portions to the first main surfaces of the semiconductor elements; and

a conductive plate that includes a second lead terminal and a semiconductor element bonding portion which is bonded to the two or more semiconductor elements, with a second bonding material layer interposed therebetween.

16. The semiconductor device according to claim 15,

wherein the semiconductor element bonding portion of the conductive plate, the second bonding material layer, the semiconductor elements, the first bonding material layer, and the bonding portion of the electrode plate are sealed by the molding resin, and

the first lead terminal of the electrode plate and the second lead terminal of the conductive plate are external terminals.