NOVEL 3D SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
1. A semiconductor device, comprising:
- a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer;
a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material;
at least one contact to said second transistors,wherein said at least one contact has a diameter of less than 200 nm;
a first set of external connections underlying said first layer to connect said device to external devices;
a second set of external connections overlying said second layer to connect said device to external devices; and
an interconnection layer in-between said first layer and said second layer,wherein said interconnection layer comprises copper or aluminum.
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Accused Products
Abstract
A semiconductor device, including: a first layer including monocrystalline material and first transistors, the first transistors overlaid by a first isolation layer; a second layer including second transistors and overlaying the first isolation layer, the second transistors including a monocrystalline material; at least one contact to the second transistors, where the at least one contact has a diameter of less than 200 nm; a first set of external connections underlying the first layer to connect the device to external devices; a second set of external connections overlying the second layer to connect the device to external devices; and an interconnection layer in-between the first layer and the second layer, where the interconnection layer includes copper or aluminum.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer; a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material; at least one contact to said second transistors, wherein said at least one contact has a diameter of less than 200 nm; a first set of external connections underlying said first layer to connect said device to external devices; a second set of external connections overlying said second layer to connect said device to external devices; and an interconnection layer in-between said first layer and said second layer, wherein said interconnection layer comprises copper or aluminum. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer; a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material; at least one contact to said second transistors, wherein said second layer thickness is less than 200 nm; a first set of external connections underlying said first layer to connect said device to external devices; and a second set of external connections overlying said second layer to connect said device to external devices. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a first layer comprising monocrystalline material and first transistors and first alignment mark, said first transistors overlaid by a first isolation layer; a second layer comprising second alignment mark and second transistors and said second layer is overlaying said first isolation layer, said second transistors comprising a monocrystalline material; at least one via through said second layer, wherein said one via is aligned to said first alignment mark and said second alignment mark; a first set of external connections underlying said first layer to connect said device to external devices; and a second set of external connections overlying said second layer to connect said device to external devices. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification