SLURRY, POLISHING-SOLUTION SET, POLISHING SOLUTION, SUBSTRATE POLISHING METHOD, AND SUBSTRATE

• US 20150098887A1
• Filed: 03/26/2013
• Published: 04/09/2015
• Est. Priority Date: 05/22/2012
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Hitachi Chemical Company Limited (Resonac Holdings Corp.)
• Inventors: Iwano, Tomohiro, Minami, Hisataka, Akutsu, Toshiaki, Fujisaki, Koji
• Granted Patent: US 10,557,059 B2
• Time in Patent Office: Days
• US Class Current: 423/325
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: C01B 33/113 Silicon oxides; Hydrates thereof preparing monoxide by reduction of siliceous material C01B33/182
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1436 Composite particles, e.g. coated particles
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×10⁵ G.

Claims

1. A slurry comprising:

an abrasive grain; and

water, wherein

the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G.

2. The slurry according to claim 1, wherein the abrasive grain produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

3. The slurry according to claim 1, wherein the abrasive grain produces light transmittance of 95%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

4. The slurry according to claim 1, wherein the abrasive grain produces absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.

5. The slurry according to claim 1, wherein the abrasive grain produces absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.

6. The slurry according to claim 1, wherein the abrasive grain produces absorbance of 10 or more for light having a wavelength of 290 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G.

7. The slurry according to claim 1, wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.

8. The slurry according to claim 1, wherein the tetravalent metal element is tetravalent cerium.

9. A polishing-liquid set wherein constituent components of a polishing liquid are separately stored as a first liquid and a second liquid such that the first liquid and the second liquid are mixed to form the polishing liquid, the first liquid is the slurry according to claim 1, and the second liquid comprises an additive and water.

10. The polishing-liquid set according to claim 9, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

11. The polishing-liquid set according to claim 9, wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.

22. A base substrate polishing method comprising:

a step of arranging a material to be polished of a base substrate having the material to be polished on a surface so as to be opposed to a polishing pad; and

a step of polishing at least a part of the material to be polished by supplying the slurry according to claim 1 between the polishing pad and the material to be polished.

23. A base substrate polishing method comprising:

a step of arranging a material to be polished of a base substrate having the material to be polished on a surface so as to be opposed to a polishing pad;

a step of obtaining the polishing liquid by mixing the first liquid and the second liquid of the polishing-liquid set according to claim 9; and

a step of polishing at least a part of the material to be polished by supplying the polishing liquid between the polishing pad and the material to be polished.

24. A base substrate polishing method comprising:

a step of arranging a material to be polished of a base substrate having the material to be polished on a surface so as to be opposed to a polishing pad; and

a step of polishing at least a part of the material to be polished by supplying each of the first liquid and the second liquid of the polishing-liquid set according to claim 9 between the polishing pad and the material to be polished.

26. The polishing method according to claim 22, wherein the material to be polished includes silicon oxide.

27. The polishing method according to claim 22, wherein irregularities are formed on a surface of the material to be polished.

28. A base substrate polished by the polishing method according to claim 22.

29. The polishing method according to claim 23, wherein the material to be polished includes silicon oxide.

30. The polishing method according to claim 23, wherein irregularities are formed on a surface of the material to be polished.

31. A base substrate polished by the polishing method according to claim 23.

32. The polishing method according to claim 24, wherein the material to be polished includes silicon oxide.

33. The polishing method according to claim 24, wherein irregularities are formed on a surface of the material to be polished.

34. A base substrate polished by the polishing method according to claim 24.

12. A polishing liquid comprising:

an abrasive grain;

an additive; and

water, wherein

the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G.

13. The polishing liquid according to claim 12, wherein the abrasive grain produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

14. The polishing liquid according to claim 12, wherein the abrasive grain produces light transmittance of 95%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

15. The polishing liquid according to claim 12, wherein the abrasive grain produces absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.

16. The polishing liquid according to claim 12, wherein the abrasive grain produces absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.

17. The polishing liquid according to claim 12, wherein the abrasive grain produces absorbance of 10 or more for light having a wavelength of 290 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G.

18. The polishing liquid according to claim 12, wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.

19. The polishing liquid according to claim 12, wherein the tetravalent metal element is tetravalent cerium.

20. The polishing liquid according to claim 12, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

21. The polishing liquid according to claim 12, wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.

25. A base substrate polishing method comprising:

a step of arranging a material to be polished of a base substrate having the material to be polished on a surface so as to be opposed to a polishing pad; and

a step of polishing at least a part of the material to be polished by supplying the polishing liquid according to claim 12 between the polishing pad and the material to be polished.

35. The polishing method according to claim 25, wherein the material to be polished includes silicon oxide.

36. The polishing method according to claim 25, wherein irregularities are formed on a surface of the material to be polished.

37. A base substrate polished by the polishing method according to claim 25.