NON-CONDUCTIVE FILM AND NON-CONDUCTIVE PASTE INCLUDING ZINC PARTICLES, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE

• US 20150102485A1
• Filed: 05/28/2014
• Published: 04/16/2015
• Est. Priority Date: 10/10/2013
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology, Samsung Electronics Co. Ltd.
• Original Assignee: Korea Advanced Institute of Science and Technology, Samsung Electronics Co. Ltd.
• Inventors: Kang, Un-byoung, Seo, Sun-kyoung, Paik, Kyung-wook, Cho, Tae-Je, Jee, Young-kun, Choi, Yong-won, Shin, Ji-won
• Granted Patent: US 9,376,541 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: C08K 2003/0893 Zinc
• CPC Class Codes: C08K 2201/011 Nanostructured additives
• CPC Class Codes: C08K 3/08 Metals
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16503 comprising an intermetallic compound
• CPC Class Codes: H01L 2224/17181 On opposite sides of the body
• CPC Class Codes: H01L 2224/27 Manufacturing methods
• CPC Class Codes: H01L 2224/2732 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/27436 Lamination of a preform, e.g. foil, sheet or layer
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29318 Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/32505 outside the bonding interface, e.g. in the bulk of the layer connector
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73104 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73207 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/8211 : involving protection against electrical discharge, e.g. removing electrostatic charge
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/9211 : Parallel connecting processes
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/91 : Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3651 : Formation of intermetallics

Abstract

A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Claims

1. A non-conductive material layer selected from a non-conductive film (NCF) and a non-conductive polymer paste (NCP) comprising a dispersion of zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type.

2. The non-conductive material layer of claim 1, wherein a content of the Zn particles ranges from about 0.1 weight % to about 20 weight %.

3. The non-conductive material layer of claim 1, wherein the non-conductive polymer base material has a minimum viscosity of about 1 Pa·

s to about 5000 Pa·

s at a temperature of about 20°

C.

4. The non-conductive material layer of claim 1, further comprising release films on opposite surfaces of the non-conductive polymer base material.

5. The non-conductive material layer of claim 1, further comprising a flux agent.

20. A semiconductor package comprising:

a first substrate including first electrode terminals;

a second substrate including second electrode terminals facing the first electrode terminals; and

,

a non-conductive material layer according to claim 1.

6. A semiconductor package comprising:

a first substrate including first electrode terminals;

a second substrate including second electrode terminals facing the first electrode terminals; and

a non-conductive material layer containing a dispersion of zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm, where the non-conductive material layer is disposed between the first substrate and the second substrate.

7. The semiconductor package of claim 6, wherein the Zn particles are unevenly distributed in the non-conductive material layer.

8. The semiconductor package of claim 7, wherein a concentration of the Zn particles in the non-conductive material layer at a location that is separated by a first distance from each of the first electrode terminals is less than a concentration of the Zn particles at a location that is separated by a second distance, that is greater than the first distance, from each of the first electrode terminals.

9. The semiconductor package of claim 8, wherein the concentration of the Zn particles in the non-conductive material layer becomes lower as a distance to a first electrode terminal decreases.

10. The semiconductor package of claim 6, wherein the first electrode terminals and the second electrode terminals are electrically connected to each other via solder bumps.

11. The semiconductor package of claim 10, wherein each of the solder bumps comprises an intermetallic compound (IMC), and at least a part of the IMC comprises zinc.

12. The semiconductor package of claim 11, wherein at least a part of the IMC comprises an IMC between tin (Sn) and Zn.

13. The semiconductor package of claim 6, wherein the first substrate and the second substrate are semiconductor chips that are the same.

14. The semiconductor package of claim 6, wherein the first substrate is a printed circuit board (PCB) or an interposer, and the second substrate is a semiconductor chip.

15. An electronic system comprising:

a controller;

an input/output unit for inputting or outputting data;

a memory unit for storing the data;

an interface unit for transmitting or receiving data to or from an external device; and

a bus for connecting the controller, the input/output unit, the memory unit, and the interface unit so as to communicate with each other,

wherein at least one of the controller and the memory unit comprises the semiconductor package of claim 6.

16. A semiconductor package comprising at least first and second semiconductor devices disposed on a substrate, where the first and second semiconductor devices are separated from each other and have corresponding facing electrical connection pads connected by first device-to-second device tin-based solder bumps, the improvement comprising a non-conductive material layer between the first and second semiconductor devices that surrounds and contacts the first device-to-second device solder bumps, said non-conductive material layer comprising a non-conductive polymer based material containing a dispersion of zinc particles.

17. A semiconductor package according to claim 16 wherein the zinc particles have an average particle diameter of about 1 nm to about 200 nm and also wherein the zinc content in the non-conductive polymer base material ranges from about 0.1% to about 20% by weight.

18. A semiconductor package according to claim 16 wherein the substrate and the first semiconductor device are separated from each other and have corresponding facing electrical connection pads connected by substrate-to-device tin-based solder bumps, further wherein there is a non-conductive material layer between the substrate and the first semiconductor device that surrounds and contacts the substrate-to-device solder bumps, said non-conductive material layer comprising a non-conductive polymer base material containing a dispersion of zinc particles.

19. A semiconductor package according to claim 18 wherein at least three semiconductor devices are stacked on a substrate and wherein tin-based solder bumps provide electrical connections between adjacent but separated semiconductor devices, further wherein there is non-conductive material layer between adjacent semiconductor devices that surrounds and contacts the solder bumps, said non-conductive material layer comprising a non-conductive polymer base material containing a dispersion of zinc particles.