LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE
First Claim
1. A light emitting diode (LED) comprising:
- a substrate;
a first semiconductor layer formed over the substrate and having a first conductivity type;
an active layer formed over the first semiconductor layer and configured to generate light;
a second semiconductor layer formed over the active layer and having a second conductivity type;
a protective insulating layer formed as multiple portions over at least the second semiconductor layer with the multiple portions spaced apart from each other; and
a reflection pattern formed between the multiple portions of the protective insulating layers configured, the reflection pattern configured to reflect light generated in the active layer, the reflection pattern including a conductive barrier layer contacting the protective insulating layer and extending over the second semiconductor layer.
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Abstract
Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
36 Citations
20 Claims
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1. A light emitting diode (LED) comprising:
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a substrate; a first semiconductor layer formed over the substrate and having a first conductivity type; an active layer formed over the first semiconductor layer and configured to generate light; a second semiconductor layer formed over the active layer and having a second conductivity type; a protective insulating layer formed as multiple portions over at least the second semiconductor layer with the multiple portions spaced apart from each other; and a reflection pattern formed between the multiple portions of the protective insulating layers configured, the reflection pattern configured to reflect light generated in the active layer, the reflection pattern including a conductive barrier layer contacting the protective insulating layer and extending over the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a light emitting diode (LED), comprising:
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forming a stacked structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a protective insulating layer over a substrate; etching a part of the stacked structure and forming mesa regions to be spaced apart from each other, each mesa region exposing at least a portion of a surface of the first semiconductor layer; forming photoresist patterns on the mesa regions, each photoresist pattern having an overhang structure; etching the protective insulating layer exposed by the photoresist patterns to expose a part of the second semiconductor layer, the protective insulating layer remaining in a recessed region under the photoresist patterns; forming a reflective metal layer over the exposed part of the second semi-conductor layer; and forming a conductive barrier layer over the reflective metal layer, the conductive barrier layer extending to the protective insulating layer. - View Dependent Claims (13, 14, 15)
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16. A method of manufacturing a light emitting diode (LED), comprising:
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forming a first semiconductor layer, an active layer, and a second semiconductor layer over a substrate; etching the second semiconductor layer and the active layer and forming mesa regions to be spaced apart from each other, each mesa region exposing a surface of the first semiconductor layer; forming a protective insulating layer over the mesa regions and the second semiconductor layer; forming photoresist patterns on the mesa regions, each photoresist pattern having an overhang structure; etching the protective insulating layer exposed through the photoresist patterns to expose a part of the second semiconductor layer and remain in a recessed region under the photoresist patterns; forming a reflective metal layer over the exposed part of the second semi-conductor layer; and forming a conductive barrier layer over the reflective metal layer, the conductive barrier layer configured to contact with the protective insulating layer without being attached to a sidewall of each photoresist pattern.
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17. A method of manufacturing a light emitting diode (LED) module, comprising:
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fabricating a stacked structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a reflective pattern, wherein the reflective pattern includes a reflective metal layer and a conductive barrier layer, the conductive barrier layer surrounding at least a part of the reflective metal layer and shaped to continuously extend over the second semiconductor layer; forming a first insulating layer over the stacked structure to expose the reflection pattern and the first semiconductor layer; forming a conductive reflection layer and a reflective barrier layer over the first insulating layer to expose the reflection pattern, the reflective barrier layer electrically connected to the first semiconductor layer through the conductive reflection layer; forming a second insulating layer over the reflective barrier layer to expose the reflection pattern and the reflective barrier layer electrically connected to the first semiconductor layer; and forming a first pad over the reflective barrier layer and a second pad over the reflection pattern. - View Dependent Claims (18, 19, 20)
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Specification