Semiconductor Device
First Claim
1. A semiconductor device comprising:
- a first semiconductor region, which has a first conductivity type;
a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region;
a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region;
a fourth semiconductor region, which has the second conductivity type and is arranged on the third semiconductor region;
an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region;
a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region;
a first main electrode, which is electrically connected to the first semiconductor region, anda second main electrode, which is electrically connected to the fourth semiconductor region,wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger.
1 Assignment
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Accused Products
Abstract
A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region; a first main electrode, which is electrically connected to the first semiconductor region, and a second main electrode, which is electrically connected to the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger.
5 Citations
11 Claims
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1. A semiconductor device comprising:
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a first semiconductor region, which has a first conductivity type; a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region; a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region; a fourth semiconductor region, which has the second conductivity type and is arranged on the third semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region; a first main electrode, which is electrically connected to the first semiconductor region, and a second main electrode, which is electrically connected to the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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2. A semiconductor device comprising:
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a first semiconductor region, which has a first conductivity type; a second semiconductor region, which has a second conductivity type and which arranged on the first semiconductor region; a third semiconductor region, which has the first conductivity type and which is arranged on the second semiconductor region; a fourth semiconductor region, which has the second conductivity type and which is arranged on the third semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode arranged on the insulation film on a side surface of the recess and facing the third semiconductor region; a first main electrode electrically connected to the first semiconductor region, and a second main electrode electrically connected to the fourth semiconductor region, wherein a ratio of a total area of the recess on an extension of an interface between the second semiconductor region and the third semiconductor region to a total area of a region of the third semiconductor region contacting the second main electrode is 1 or larger.
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Specification