RF SWITCH

• US 20150133065A1
• Filed: 05/02/2014
• Published: 05/14/2015
• Est. Priority Date: 11/11/2013
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: YOO, Hyun Jin, NA, Yoo Sam, KIM, Jong Myeong, YOO, Hyun Hwan, KIM, Yoo Hwan
• Granted Patent: US 9,197,253 B2
• Time in Patent Office: Days
• US Class Current: 455/77
• CPC Class Codes: H04B 1/006 using switches for selecting the desired band H04B1/0057 takes precedence
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence

Abstract

A RF switch may include: a common port coupled to an antenna to transmit and receive first and second high frequency signals; a transmitting switching unit coupled between a transmitting port transferring the first high frequency signal and the common port and including a plurality of switching devices coupled to each other in series; and a receiving switching unit coupled between a receiving port transferring the second high frequency signal and the common port and including a first switching unit including a first switching device. The first switching unit may further include a second switching device having a first terminal coupled to a first terminal of the first switching device and a second terminal coupled to a control terminal of the first switching device.

Claims

1. A RF (Radio Frequency) switch comprising:

a common port coupled to an antenna to transmit and receive first and second high frequency signals;

a transmitting switching unit coupled between a transmitting port transferring the first high frequency signal and the common port and including a plurality of switching devices coupled to each other in series; and

a receiving switching unit coupled between a receiving port transferring the second high frequency signal and the common port and including a first switching unit including a first switching device,

wherein the first switching unit further includes a second switching device having a first terminal coupled to a first terminal of the first switching device and a second terminal coupled to a control terminal of the first switching device.

2. The RF switch of claim 1, wherein the receiving switching unit includes a plurality of first switching units coupled to each other in series.

3. The RF switch of claim 1, wherein each of the first and second switching devices is a field effect transistor (FET) or a bipolar junction transistor (BJT).

4. The RF switch of claim 1, wherein the first switching unit further includes a first resistor coupled to the control terminal of the first switching device, and a first gate signal is applied to the control terminal of the first switching device through the first resistor.

5. The RF switch of claim 1, wherein the first switching unit further includes a first capacitor coupled between the control terminal of the first switching device and the second switching device.

6. The RF switch of claim 1, further comprising a shunt switching unit coupled between the transmitting port and the transmitting switching unit and including a second switching unit including a third switching device,

wherein the second switching unit further includes a fourth switching device having a first terminal coupled to a first terminal of the third switching device and a second terminal coupled to a control terminal of the third switching device.

7. The RF switch of claim 6, wherein the second switching unit includes a second resistor coupled to the control terminal of the third switching device, and a second gate signal is applied to the control terminal of the third switching device through the second resistor.

8. A RF switch comprising:

a common port coupled to an antenna to transmit and receive first and second high frequency signals;

a transmitting switching unit coupled between a transmitting port transferring the first high frequency signal and the common port and including a plurality of switching devices coupled to each other in series; and

a receiving switching unit coupled between a receiving port transferring the second high frequency signal and the common port and including a plurality of switching circuit units coupled to each other in series,

wherein each of the plurality of switching circuit units includes first and second switching devices, the second switching device having a first connection point at which a control terminal and a second terminal thereof are coupled to each other, and the first switching device having a control terminal coupled to the first connection point.

9. The RF switch of claim 8, wherein each of the plurality of switching circuit units further includes a first resistor coupled to the control terminal of the first switching device, and a first gate signal is applied to the control terminal of the first switching device through the first resistor.

10. The RF switch of claim 8, wherein each of the first and second switching devices is an FET or a BJT.

11. The RF switch of claim 8, wherein each of the plurality of switching circuit units further includes a capacitor coupled between the control terminal of the first switching device and the first connection point.

12. The RF switch of claim 8, further comprising a shunt switching unit coupled between the transmitting port and the transmitting switching unit and including a plurality of switching circuit units coupled to each other in series,

wherein each of the plurality of switching circuit units of the shunt switching unit includes third and fourth switching devices, the third switching device having a second connection point at which a control terminal and a second terminal thereof are coupled to each other, and the fourth switching device having a control terminal coupled to the second connection point.

13. The RF switch of claim 12, wherein each of the plurality of switching circuit units of the shunt switching unit includes a second resistor coupled to the control terminal of the third switching device, and a second gate signal is applied to the control terminal of the third switching device through the second resistor.

14. A RF switch comprising:

a common port coupled to an antenna to transmit and receive first and second high frequency signals;

a transmitting switching unit coupled between a transmitting port transferring the first high frequency signal and the common port and including a plurality of switching devices coupled to each other in series; and

a receiving switching unit coupled between a receiving port transferring the second high frequency signal and the common port and including a first switching unit including a first switching device,

wherein the first switching unit further includes a second switching device having a first terminal coupled to a first terminal of the first switching device and a second terminal coupled to a control terminal of the first switching device and a third switching device having a first terminal coupled to the control terminal of the first switching device and a second terminal coupled to the first terminal of the first switching device.

15. The RF switch of claim 14, wherein the receiving switching unit includes a plurality of first switching units coupled to each other in series.

16. The RF switch of claim 14, wherein the first switching unit further includes a first resistor coupled to the control terminal of the first switching device, and a first gate signal is applied to the control terminal of the first switching device through the first resistor.

17. The RF switch of claim 14, wherein the first switching unit further includes a first capacitor coupled between the control terminal of the first switching device and the second switching device and a second capacitor coupled between the control terminal of the first switching device and the third switching device.

18. The RF switch of claim 14, further comprising a shunt switching unit coupled between the transmitting port and the transmitting switching unit and including a second switching unit including a fourth switching device,

wherein the second switching unit further includes a fifth switching device having a first terminal coupled to a first terminal of the fourth switching device and a second terminal coupled to a control terminal of the fourth switching device and a sixth switching device having a first terminal coupled to the control terminal of the fourth switching device and a second terminal coupled to the first terminal of the fourth switching device.

19. The RF switch of claim 18, wherein the second switching unit includes a third resistor coupled to a control terminal of the fifth switching device and a fourth resistor coupled to a control terminal of the sixth switching device, and a second gate signal is applied to the control terminals of the fifth and sixth switching devices through the third and fourth resistors, respectively.