Methods for Forming Electrically Precise Capacitors, and Structures Formed Therefrom
First Claim
1. A method of forming a capacitor, comprising:
- a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode;
b. depositing a first insulating layer on said metal layer by atomic layer deposition (ALD);
c. forming a second capacitor electrode on said first insulating layer; and
d. forming a second insulating layer on said first insulating layer and on and/or adjacent to said second capacitor electrode.
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Accused Products
Abstract
High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
9 Citations
20 Claims
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1. A method of forming a capacitor, comprising:
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a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode; b. depositing a first insulating layer on said metal layer by atomic layer deposition (ALD); c. forming a second capacitor electrode on said first insulating layer; and d. forming a second insulating layer on said first insulating layer and on and/or adjacent to said second capacitor electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A capacitor, comprising:
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a. a metal substrate selected from the group consisting of foils and sheets of stainless steel, molybdenum, copper and aluminum, said metal substrate further comprising a barrier layer thereon; b. a first insulating layer on said metal substrate, said first insulating layer having a substantially uniform thickness of from 3 Å
to 200 Å and
a predetermined breakdown voltage;c. a first capacitor electrode on said first insulating layer, wherein said first capacitor electrode (i) has an uppermost surface that is smooth and/or curved and a cross-sectional profile, and (ii) is capacitively coupled to said metal substrate; d. a second insulating layer on said first capacitor electrode and said first insulating layer; and e. an antenna on said second insulating layer, electrically connected to said first capacitor electrode and to said metal substrate. - View Dependent Claims (17, 18, 19, 20)
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Specification