FINFET CROSSPOINT FLASH MEMORY
First Claim
1. A semiconductor structure comprising:
- a pair of semiconductor fins located on a substrate;
a tunneling gate dielectric located on sidewalls of said pair of semiconductor fins;
a floating gate electrode located between said pair of semiconductor fins and contacting said tunneling gate dielectric;
a control gate dielectric contacting sidewalls of said pair of semiconductor fins and a top surface of said floating gate electrode; and
a control gate electrode overlying said control gate dielectric.
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Accused Products
Abstract
A flash memory device in a dual fin single floating gate configuration is provided. Semiconductor fins are formed on a stack of a back gate conductor layer and a back gate dielectric layer. Pairs of semiconductor fins are formed in an array environment such that shallow trench isolation structures can be formed along the lengthwise direction of the semiconductor fins within the array. After formation of tunneling dielectrics on the sidewalls of the semiconductor fins, a floating gate electrode is formed between each pair of proximally located semiconductor fins by deposition of a conformal conductive material layer and an isotropic etch. A control gate dielectric and a control gate electrode are formed by deposition and patterning of a dielectric layer and a conductive material layer.
33 Citations
20 Claims
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1. A semiconductor structure comprising:
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a pair of semiconductor fins located on a substrate; a tunneling gate dielectric located on sidewalls of said pair of semiconductor fins; a floating gate electrode located between said pair of semiconductor fins and contacting said tunneling gate dielectric; a control gate dielectric contacting sidewalls of said pair of semiconductor fins and a top surface of said floating gate electrode; and a control gate electrode overlying said control gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a semiconductor structure comprising:
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forming a pair of semiconductor fins on a substrate; forming a tunneling gate dielectric on proximal sidewalls of said pair of semiconductor fins; forming a floating gate electrode between said pair of semiconductor fins on sidewalls of said tunneling gate dielectric; forming a control gate dielectric on distal sidewalls of said pair of semiconductor fins and a top surface of said floating gate electrode; and forming a control gate electrode over said control gate dielectric. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification