PEELING METHOD AND PEELING APPARATUS

• US 20150165477A1
• Filed: 12/04/2014
• Published: 06/18/2015
• Est. Priority Date: 12/12/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, SUZUKI, Kunihiko
• Granted Patent: US 10,189,048 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B05B 1/02 designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shapeB05B1/26, B05B1/28, B05B1/34 take precedence
• CPC Class Codes: B05B 13/0221 characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts B05B13/0207 takes precedence; conveyors in general B65G
• CPC Class Codes: B05B 7/02 Spray pistols; Apparatus for discharge for spraying particulate material B05B7/14; with means for heating the material to be sprayed B05B7/16; with means for supplying fluent material to a discharge device B05B7/24
• CPC Class Codes: B05C 1/025 to flat rectangular articles, e.g. flat sheets B05C1/027 takes precedence
• CPC Class Codes: B05D 1/36 Successively applying liquids or other fluent materials, e.g. without intermediate treatment
• CPC Class Codes: B05D 1/38 with intermediate treatment intermediate treatment per se B05D3/00
• CPC Class Codes: B05D 3/007 After-treatment
• CPC Class Codes: B05D 3/068 using ionising radiations (gamma, X, electrons)
• CPC Class Codes: B05D 3/107 Post-treatment of applied coatings
• CPC Class Codes: B05D 3/12 by mechanical means
• CPC Class Codes: B32B 38/10 Removing layers, or parts of layers, mechanically or chemically
• CPC Class Codes: B32B 43/006 Delaminating
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2221/68395 using peeling wheel
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
• CPC Class Codes: Y10T 156/195 Delaminating roller means

Abstract

An object is to provide a novel peeling method and a novel peeling apparatus. A peeling method including a first step of forming a separation layer over a substrate, a second step of forming a layer to be separated over the separation layer, a third step of forming a peeling starting point by separating part of the layer to be separated from the separation layer, and a fourth step of peeling the layer to be separated from the substrate using the peeling starting point. In the fourth step, the substrate temperature is higher than or equal to 60 degrees Celsius and lower than or equal to 90 degrees Celsius.

Claims

1. A peeling method comprising the steps of:

a first step of forming a separation layer over a substrate;

a second step of forming a layer to be separated over the separation layer;

a third step of forming a peeling starting point by separating a part of the layer to be separated from the separation layer;

a fourth step of peeling the layer to be separated from the substrate using the peeling starting point; and

a liquid supplying step of supplying liquid to the peeling starting point,

wherein a temperature of the liquid is higher than or equal to 60°

C. and lower than or equal to 90°

C.

2. The peeling method according to claim 1, wherein the fourth step includes a step of heating a first portion of the substrate and a step of cooling a second portion of the layer to be separated.

3. The peeling method according to claim 2,

wherein the first portion includes a portion that is not separated from the layer to be separated after the fourth step, and

wherein the second portion includes a portion separated from the substrate after the fourth step.

4. The peeling method according to claim 1, wherein the liquid includes water.

5. The peeling method according to claim 1, further comprising the step of a static electricity eliminating step of eliminating static electricity from a surface of the layer to be separated, the surface being exposed by separating from the substrate,

wherein the static electricity eliminating step is performed during at least one of a third period and a fourth period,

wherein the third period is in the fourth step, and

wherein the fourth period is after the fourth step.

6. The peeling method according to claim 1, further comprising the step of a drying step of drying a surface of the layer to be separated, the surface being exposed by separating from the substrate,

wherein the drying step is performed after the fourth step.

7. The peeling method according to claim 1, wherein the separation layer contains tungsten.

8. The peeling method according to claim 1, further comprising the step of an oxidation step of oxidizing the separation layer,

wherein the oxidation step is performed between the first step and the second step.

9. The peeling method according to claim 8, wherein the oxidation step includes a plasma treatment step performed under an atmosphere containing nitrous oxide (N₂O).

10. A peeling method comprising the steps of:

a first step of forming a separation layer over a substrate;

a second step of forming a layer to be separated over the separation layer;

a third step of forming a peeling starting point by separating a part of the layer to be separated from the separation layer; and

a fourth step of peeling the layer to be separated from the substrate using the peeling starting point,

wherein in the fourth step, a temperature of the substrate is kept to be higher than or equal to 60°

C. and lower than or equal to 90°

C.

11. The peeling method according to claim 10, wherein at least a part of the substrate is heated in the fourth step.

12. The peeling method according to claim 10, further comprising the step of a liquid supplying step of supplying liquid between the layer to be separated and the separation layer,

wherein the liquid supplying step is performed during at least one of a first period and a second period,

wherein the first period is between the third step and the fourth step, and

wherein the second period is in the fourth step.

13. The peeling method according to claim 12, wherein a temperature of the liquid is higher than 0°

C. and lower than 100°

C.

14. The peeling method according to claim 12, wherein the liquid includes water.

15. A peeling method comprising the steps of:

a first step of forming a separation layer over a substrate;

a second step of forming a layer to be separated over the separation layer;

a third step of forming a peeling starting point by separating a part of the layer to be separated from the separation layer; and

a fourth step of peeling the layer to be separated from the substrate using the peeling starting point,

wherein in the fourth step, the layer to be separated is peeled from the substrate while at least a part of the layer to be separated is cooled.

16. The peeling method according to claim 15, further comprising the step of a liquid supplying step of supplying liquid between the layer to be separated and the separation layer,

wherein the liquid supplying step is performed during at least one of a first period and a second period,

wherein the first period is between the third step and the fourth step, and

wherein the second period is in the fourth step.

17. The peeling method according to claim 16, wherein a temperature of the liquid is higher than 0°

C. and lower than 100°

C.

18. The peeling method according to claim 16, wherein the liquid includes water.

19. A peeling apparatus comprising:

a structure body;

a stage;

a liquid supplying mechanism;

a first temperature adjustment mechanism; and

a second temperature adjustment mechanism,

wherein the structure body is capable of holding a first member of a process member,

wherein the stage is capable of holding a second member of the process member,

wherein the first temperature adjustment mechanism is capable of adjusting a temperature of the structure body,

wherein the second temperature adjustment mechanism is capable of adjusting a temperature of the stage,

wherein the liquid supplying mechanism is capable of supplying liquid to a separation surface between the first member and the second member, and

wherein the peeling apparatus is capable of winding the first member around the structure body to separate the first member from the second member.

20. The peeling apparatus according to claim 19, further comprising a drying mechanism,

wherein the drying mechanism is capable of drying the first member.

21. The peeling apparatus according to claim 19, further comprising a static electricity eliminating mechanism,

wherein the static electricity eliminating mechanism is capable of eliminating static electricity from the first member.