SEMICONDUCTOR ASSEMBLIES, STACKED SEMICONDUCTOR DEVICES, AND METHODS OF MANUFACTURING SEMICONDUCTOR ASSEMBLIES AND STACKED SEMICONDUCTOR DEVICES
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0 Petitions
Accused Products
Abstract
Stacked semiconductor devices, semiconductor assemblies, methods of manufacturing stacked semiconductor devices, and methods of manufacturing semiconductor assemblies. One embodiment of a semiconductor assembly comprises a thinned semiconductor wafer having an active side releaseably attached to a temporary carrier, a back side, and a plurality of first dies at the active side. The individual first dies have an integrated circuit, first through die interconnects electrically connected to the integrated circuit, and interconnect contacts exposed at the back side of the wafer. The assembly further includes a plurality of separate second dies attached to corresponding first dies on a front side, wherein the individual second dies have integrated circuits, through die interconnects electrically connected to the integrated circuits and contact points at a back side, and wherein the individual second dies have a thickness of approximately less than 100 microns.
9 Citations
37 Claims
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1-20. -20. (canceled)
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21. A method of manufacturing semiconductor assemblies, comprising:
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testing first dies of a wafer and individual second dies to determine known good first dies, known good second dies, known bad first dies, and known bad second dies; and after testing the first dies and the second dies, attaching the individual known good second dies to corresponding known good first dies of the wafer to form a plurality of known good stacked assemblies, and attaching the individual known bad second dies to corresponding known bad first dies of the wafer to form a plurality of known bad stacked assemblies. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A method of manufacturing microelectronic devices, comprising:
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providing a wafer with a plurality of first dies that include known good first dies and known bad first dies; and attaching a plurality of separated second dies to the first dies to form a plurality of stacked good microelectronic devices and a plurality of stacked bad microelectronic devices, wherein the stacked good microelectronic devices include the known good first dies and known good second dies of the second dies, and wherein the stacked bad microelectronic devices include the known bad first dies and known bad second dies of the second dies. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification