ELECTROLYTE AND PROCESS FOR ELECTROPLATING COPPER ONTO A BARRIER LAYER
First Claim
1. Electrolyte for electroplating copper onto a copper-diffusion barrier layer, the electrolyte comprising a source of copper ions, a solvent, and the combination of a suppressor and an accelerator, characterized in that the suppressor comprises the combination of bipyridine and imidazole, and the accelerator is thiodiglycolic acid.
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Abstract
The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer.
This electrolyte contains the combination of imidazole and 2,2′-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator.
The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.
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19 Claims
- 1. Electrolyte for electroplating copper onto a copper-diffusion barrier layer, the electrolyte comprising a source of copper ions, a solvent, and the combination of a suppressor and an accelerator, characterized in that the suppressor comprises the combination of bipyridine and imidazole, and the accelerator is thiodiglycolic acid.
Specification