LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

• US 20150221822A1
• Filed: 04/17/2015
• Published: 08/06/2015
• Est. Priority Date: 01/05/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Kwang Joong, Han, Chang Suk, Ye, Kyung Hee, Choi, Seung Kyu, Nam, Ki Bum, Kim, Nam Yoon, Kim, Kyung Hae, Yoon, Ju Hyung
• Granted Patent: US 9,716,210 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Claims

1-42. -42. (canceled)

43. A light emitting diode, comprising:

an n-type contact layer;

a p-type contact layer disposed over the n-type contact layer;

an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In);

a superlattice layer including a plurality of layers, disposed near the active region; and

a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer,

wherein at least one of the plurality of layers in the spacer layer is doped with n-type impurities, at least one layer of the plurality of layers in the spacer layer is positioned adjacent to the active region, and the at least one layer of the plurality of layers in the spacer layer comprises In at a composition ratio that is lower than the In composition ratio within the quantum well layer.

44. The light emitting diode of claim 43, further comprising an un-doped intermediate layer disposed between the n-type contact layer and the active region.

45. The light emitting diode of claim 43, wherein the spacer layer comprises a stacked structure of at least two different InGaN layers.

46. The light emitting diode of claim 43, wherein the at least one layer of the plurality of layers in the spacer layer positioned adjacent to the active region is doped with n-type impurities.

47. The light emitting diode of claim 43, wherein:

the n-type contact layer includes n-type impurities; and

the at least one of the plurality of layers in the spacer layer that is doped with n-type impurities is doped with the n-type impurities at a higher concentration than a concentration of the n-type impurities in the n-type contact layer.

48. The light emitting diode of claim 47, further comprising:

an intermediate layer disposed between the n-type contact layer and the spacer layer and including n-type impurities, wherein a concentration of the n-type impurities in the intermediate layer is higher than the concentration of the n-type impurities in the n-type contact layer and lower than the concentration of the n-type impurities in the spacer layer.

49. The light emitting diode of claim 48, wherein the intermediate layer includes an n-AlGaN layer.

50. The light emitting diode of claim 49, wherein the n-AlGaN layer in the intermediate layer has a gradually or stepwise reduced Al composition toward the active region than away from the active region.

51. A light emitting diode, comprising:

an n-type contact layer doped with n-type impurities;

a spacer layer disposed over the n-type contact layer and including a stack structure including a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is closer to the n-type contact layer than the second semiconductor layer;

an active region disposed over the spacer layer and having a multi-quantum well structure; and

a p-type contact layer disposed over the active region;

wherein the first and second semiconductor layers of the spacer layer have respective Indium (In) composition ratios and the In composition ratio of the first semiconductor layer is lower than the In composition ration of the second semiconductor layer.

52. The light emitting diode of claim 51, wherein the multi-quantum well structure includes a barrier layer and a quantum well layer that are alternately stacked and the quantum well layer includes an InGaN layer.

53. The light emitting diode of claim 51, wherein the active region is not doped with the n-type impurities.

54. The light emitting diode of claim 51, wherein the first semiconductor layer of the spacer layer is not doped with the n-type impurities and the second semiconductor layer of the spacer layer is doped with the n-type impurities.

55. The light emitting diode of claim 51, wherein the spacer layer is doped with n-type impurities at higher concentration than a concentration of the n-type impurities in the n-type contact layer.

56. The light emitting diode of claim 51, further comprising an intermediate layer formed between the n-type contact layer and the spacer layer and including n-AlGaN layer.

57. The light emitting diode of claim 56, wherein the intermediate layer is doped with the n-type impurities at a concentration that is higher than a concentration of the n-type impurities in the n-type contact layer.

58. The light emitting diode of claim 56, wherein the n-AlGaN layer has a gradually or stepwise reduced Al composition toward the active region than away from the active region.

59. The light emitting diode of claim 51, wherein the n-type contact layer comprises at least two different n-type GaN layers and an n-type AlGaN layer disposed between the at least two different n-type GaN layers.

60. The light emitting diode of claim 51, wherein the first and second semiconductor layers of the spacer layer include different InGaN layers.

61. The light emitting diode of claim 51, wherein the multi-quantum well structure of the active region includes a composition ratio of In.

62. The light emitting diode of claim 61, wherein the In composition ratio of the second semiconductor layer is higher than the composition ratio of In in the multi-quantum well structure.

63. The light emitting diode of claim 61, wherein the composition ratio of In in at least one of the first and second semiconductor layers is lower than the composition ratio of In in the multi-quantum well structure.

64. The light emitting diode of claim 51, further comprising a superlattice layer disposed near the active region.