Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls

• US 20150235713A1
• Filed: 05/01/2015
• Published: 08/20/2015
• Est. Priority Date: 05/31/2013
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Baldi, Livio, Mariani, Marcello
• Granted Patent: US 10,147,497 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11B 5/4946 for formation or displacement of magnetic domains, e.g. walls, bubbles
• CPC Class Codes: G11C 11/14 using thin-film elements
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 19/0808 using magnetic domain propagation
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.

Claims

1. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

forming an elevationally outer substrate material of uniform chemical composition;

partially etching into the uniform composition material to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material; and

forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks.

2. The method of claim 1 wherein the alternating regions have outer surfaces which are horizontal or within 10°

of horizontal.

3. The method of claim 1 wherein the composition is dielectric.

4. The method of claim 3 wherein the composition comprises at least one of silicon dioxide and silicon nitride.

5. The method of claim 1 wherein magnetic material of the magnetic tracks is not formed directly against the elevationally outer substrate material.

6. The method of claim 5 comprising an electrically conductive material between the elevationally outer substrate material and the magnetic tracks.

7. The method of claim 1 wherein magnetic material of the magnetic tracks is not elevationally within the depressions.

8. The method of claim 1 wherein the alternating regions form elongated parallel trenches and mesas.

9-24. -24. (canceled)

25. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

forming a series of regions having coplanar outer surfaces, immediately adjacent of the regions being of different composition relative one another; and

forming a plurality of magnetic tracks over the coplanar outer surfaces of and which angle relative to the different composition regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks.

26. The method of claim 25 wherein immediately adjacent of the regions are of different chemical compositions relative one another.

27. The method of claim 25 wherein immediately adjacent of the regions are of the same chemical composition and of different physical compositions relative one another.

28. The method of claim 25 wherein the series of regions may be characterized by only two different compositions having the coplanar outer surfaces.

29. The method of claim 25 wherein the series may be characterized by alternating first and second chemically different composition regions in the series.

30. The method of claim 25 comprising forming the coplanar outer surfaces to be horizontal.

31. The method of claim 25 comprising forming the coplanar outer surfaces to be horizontal or within 10°

of horizontal.

32. The method of claim 25 comprising forming the coplanar outer surfaces to be elevationally extending.

33. The method of claim 32 comprising forming the coplanar outer surfaces to be vertical.

34. The method of claim 32 comprising forming the coplanar outer surfaces to be neither horizontal nor vertical.

35. A memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

a series of regions having coplanar outer surfaces, immediately adjacent of the regions being of different composition relative one another; and

a plurality of magnetic tracks over the coplanar outer surfaces of and which angle relative to the different composition regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks.

36-37. -37. (canceled)

38. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

forming a series of elevationally stacked regions, immediately adjacent of the regions being of different composition relative one another;

forming longitudinally elongated first trenches elevationally through at least some of the regions, the first trenches individually comprising opposing sidewalls and a base;

forming magnetic track material within individual of the first trenches against the opposing first trench sidewalls and the first trench base, and

forming longitudinally elongated second trenches elevationally through the magnetic track material and at least some of the regions to form magnetic tracks which individually comprise a plurality of magnetic domains having domain walls, the second trenches longitudinally angling relative to the first trenches, interfaces of immediately adjacent of the regions along an individual sidewall individually comprising a domain wall pinning site in the magnetic track along that sidewall.

39-47. -47. (canceled)

48. A memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

a series of elevationally stacked regions having openings extending elevationally through at least some of the regions, immediately adjacent of the regions being of different composition relative one another, the openings individually comprising opposing sidewalls and a base; and

a magnetic track within individual of the openings against the opposing opening sidewalls and the opening base, interfaces of immediately adjacent of the regions along an individual sidewall individually comprising a domain wall pinning site in the magnetic track along that sidewall.

49-60. -60. (canceled)