SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20150236129A1
• Filed: 04/27/2015
• Published: 08/20/2015
• Est. Priority Date: 01/21/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KUWABARA, Hideaki
• Granted Patent: US 9,666,689 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/134381 Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/136236 using a grey or half tone lithographic process
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

An object is to reduce the number of photomasks used for manufacturing a transistor and manufacturing a display device to less than the conventional one. The display device is manufactured through, in total, three photolithography steps including one photolithography step which serves as both a step of forming a gate electrode and a step of forming an island-like semiconductor layer, one photolithography step of forming a contact hole after a planarization insulating layer is formed, and one photolithography step which serves as both a step of forming a source electrode and a drain electrode and a step of forming a pixel electrode.

Claims

1. (canceled)

2. A display device comprising:

a substrate;

a first conductive film over the substrate;

a first insulating film over the first conductive film;

an oxide semiconductor film over the first insulating film;

a second insulating film over the oxide semiconductor film;

a source wiring over the second insulating film and in contact with the oxide semiconductor film through a first contact hole in the second insulating film;

a common electrode over the second insulating film;

a pixel electrode over the second insulating film and in contact with the oxide semiconductor film through a second contact hole in the second insulating film;

wherein the pixel electrode and the common electrode are formed over the same layer, and

wherein the pixel electrode has comb-shaped portions.

wherein the pixel electrode has a stacked-layer structure.

3. The display device according to claim 2, wherein the common electrode has a light-transmitting property.

4. The display device according to claim 2, wherein the common electrode has a stacked-layer structure.

5. The display device according to claim 2, wherein the oxide semiconductor film contains indium, gallium, and zinc.

6. A display device comprising:

a substrate;

a first conductive film over the substrate;

a first insulating film over the first conductive film;

an oxide semiconductor film over the first insulating film;

a second insulating film over the oxide semiconductor film;

a source wiring over the second insulating film and in contact with the oxide semiconductor film through a first contact hole in the second insulating film;

a common electrode over the second insulating film;

a pixel electrode over the second insulating film and in contact with the oxide semiconductor film through a second contact hole in the second insulating film;

a capacitor electrically connected to the pixel electrode;

wherein the pixel electrode and the common electrode are formed over the same layer, and

wherein the pixel electrode has comb-shaped portions.

7. The display device according to claim 6, wherein the common electrode has a light-transmitting property.

8. The display device according to claim 6, wherein the common electrode and has the pixel electrode have a same stacked-layer structure.

9. The display device according to claim 6, wherein the oxide semiconductor film contains indium, gallium, and zinc.