OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP

• US 20150236206A1
• Filed: 09/06/2013
• Published: 08/20/2015
• Est. Priority Date: 09/18/2012
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Gaertner, Christian, Schlereth, Thomas, Kaiser, Stephan
• Granted Patent: US 9,379,286 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.

Claims

1. An optoelectronic semiconductor chip, comprising:

a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region,

a radiation exit surface,

a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and

at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface.

2. The optoelectronic semiconductor chip according to claim 1,

wherein the semiconductor layer sequence has a substrate, wherein the substrate is arranged at an opposite side of the semiconductor layer sequence relative to the mirror layer.

3. The optoelectronic semiconductor chip according to claim 2,

wherein a surface of the substrate facing away from the semiconductor layer sequence is the radiation exit surface.

4. The optoelectronic semiconductor chip according to claim 1,

wherein the optoelectronic semiconductor chip is a surface-mountable semiconductor chip.

5. The optoelectronic semiconductor chip according to claim 1,

wherein the at least two electrical contacts comprise

a first electrical contact, which is connected to the first semiconductor region of an active region closest to the mirror layer, and

a second electrical contact which is connected to the second semiconductor region of an active region closest to the radiation exit surface.

6. The optoelectronic semiconductor chip according to claim 1,

wherein the mirror layer is electrically conductive, the mirror layer adjoins the first semiconductor region of an active region closest to the mirror layer, and the first electrical contact is electrically conductively connected to the mirror layer.

7. The optoelectronic semiconductor chip according to claim 1,

wherein the second electrical contact is electrically connected to the second semiconductor region of the active region closest to the radiation exit surface by means of at least one via led through the mirror layer and the semiconductor layer sequence.

8. The optoelectronic semiconductor chip according to claim 1,

wherein a current spreading layer is arranged between the mirror layer and the electrical contacts, said current spreading layer being electrically conductively connected to the second electrical contact,

wherein the current spreading layer is insulated from the mirror layer by means of a first electrically insulating layer and is insulated from the first electrical contact by means of a second electrically insulating layer.

9. The optoelectronic semiconductor chip according to claim 8,

wherein the second electrical contact is electrically connected to the second semiconductor region of the active region closest to the radiation exit surface by means of a plurality of vias led in each case from the current spreading layer through the mirror layer and the semiconductor layer sequence.

10. The optoelectronic semiconductor chip according to claim 1,

wherein the at least two active regions are electrically connected to one another by a tunnel junction.

11. The optoelectronic semiconductor chip according to claim 1,

which comprises at least one further electrical contact, which is connected to a semiconductor region of one of the active regions, wherein the semiconductor region is not connected to the first electrical contact or second electrical contact.

12. The optoelectronic semiconductor chip according to claim 11,

wherein the at least one further electrical contact is arranged at a side of the mirror layer facing away from the radiation exit surface.

13. The optoelectronic semiconductor chip according to claim 1, preceding claims,

wherein at least two of the active regions emit radiation of different wavelengths.

14. A light source, comprising at least one optoelectronic semiconductor chip according to claim 1.

15. The light source according to claim 14,

wherein the light source comprises a reflector, and the optoelectronic semiconductor chip is arranged within the reflector.

16. The light source according to claim 14,

wherein the light source comprises a luminescence conversion layer suitable for converting at least part of the radiation emitted by the optoelectronic semiconductor chip toward a longer wavelength.

17. The light source according to claim 14,

wherein the light source is a projector or a headlight/spotlight.

18. An optoelectronic semiconductor chip,

comprising:

a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region,

a radiation exit surface,

a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and

at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface,

a current spreading layer arranged between the mirror layer and the electrical contacts, said current spreading layer being electrically conductively connected to the second electrical contact, wherein

the current spreading layer is insulated from the mirror layer by means of a first electrically insulating layer and is insulated from the first electrical contact by means of a second electrically insulating layer, and wherein

the second electrical contact is electrically connected to the second semiconductor region of the active region closest to the radiation exit surface by means of a plurality of vias led in each case from the current spreading layer through the mirror layer and the semiconductor layer sequence.