SEMICONDUCTOR DEVICE

• US 20150255534A1
• Filed: 03/03/2015
• Published: 09/10/2015
• Est. Priority Date: 03/07/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, YAMADA, Yoshinori, NONAKA, Yusuke, OOTA, Masashi, KUROSAWA, Yoichi, ISHIHARA, Noritaka, HAMADA, Takashi, ICHIJO, Mitsuhiro, EGI, Yuji
• Granted Patent: US 9,806,201 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Claims

1. A semiconductor device comprising:

an oxide semiconductor;

an insulator; and

a conductor,

wherein the oxide semiconductor overlaps with the conductor with the insulator therebetween, and

wherein the oxide semiconductor comprises a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor comprises a region in which hydrogen concentration measured by secondary ion mass spectrometry is lower than 1×

10¹⁹ atoms/cm³.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor comprises a region in which carbon concentration measured by secondary ion mass spectrometry is lower than 1×

10²⁰ atoms/cm³.

4. A semiconductor device comprising:

an oxide semiconductor;

a first conductor;

a second conductor; and

an insulator,

wherein the oxide semiconductor overlaps with the first conductor with the insulator therebetween,

wherein the oxide semiconductor is in contact with the second conductor, and

wherein the oxide semiconductor comprises a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

5. The semiconductor device according to claim 4, wherein the oxide semiconductor comprises a region in which hydrogen concentration measured by secondary ion mass spectrometry is lower than 1×

10¹⁹ atoms/cm³.

6. The semiconductor device according to claim 4, wherein the oxide semiconductor comprises a region in which carbon concentration measured by secondary ion mass spectrometry is lower than 1×

10²⁰ atoms/cm³.

7. A semiconductor device comprising:

an oxide semiconductor;

a first conductor;

a second conductor; and

an insulator,

wherein the oxide semiconductor overlaps with the first conductor with the insulator therebetween,

wherein the oxide semiconductor is in contact with the second conductor,

wherein the first conductor overlaps with the second conductor, and

wherein the oxide semiconductor comprises a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

8. The semiconductor device according to claim 7, wherein the oxide semiconductor comprises a region in which hydrogen concentration measured by secondary ion mass spectrometry is lower than 1×

10¹⁹ atoms/cm³.

9. The semiconductor device according to claim 7, wherein the oxide semiconductor comprises a region in which carbon concentration measured by secondary ion mass spectrometry is lower than 1×

10²⁰ atoms/cm³.