GAS DISTRIBUTION SYSTEM, REACTOR INCLUDING THE SYSTEM, AND METHODS OF USING THE SAME

• US 20150267299A1
• Filed: 03/18/2014
• Published: 09/24/2015
• Est. Priority Date: 03/18/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Hawkins, Mark, Halleck, Bradley Leonard, Kirschenheiter, Tom, Hossa, Benjamin, Pottebaum, Clay, Miskys, Claudio
• Granted Patent: US 10,167,557 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: Y10T 137/87249 Multiple inlet with multiple outlet
• CPC Class Codes: Y10T 137/87877 Single inlet with multiple distinctly valved outlets

Abstract

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems.

Claims

1. A gas distribution system comprising:

a flange;

one or more first gas expansion ports formed within the flange;

one or more second gas expansion ports formed within the flange;

one or more first gas channels formed within the flange, wherein each of the one or more first gas channels terminate at one of the one or more of the first gas expansion ports; and

one or more second gas channels formed within the flange, wherein the one or more second gas channels terminate at one or more of the second gas expansion ports.

2. The gas distribution system of claim 1, wherein the one or more first gas channels are fluidly coupled to a precursor source.

3. The gas distribution system of claim 2, wherein the precursor source is selected from the group consisting of trichlorosilane, dichlorosilane, silane, disilane, and trisilane.

4. The gas distribution system of claim 1, wherein the one or more second gas channels are coupled to a dopant source.

5. The gas distribution system of claim 4, wherein the dopant source is selected from one or more sources comprising As, P, C, Ge, and B.

6. The gas distribution system of claim 1, wherein at least one of the one or more first gas expansion ports and at least one of the one or more second gas expansion port are adjacent.

7. The gas distribution system of claim 1, wherein one of the one or more first gas expansion ports and one of the one or more second gas expansion ports are adjacent in a front-to-back configuration.

8. The gas distribution system of claim 1, further comprising an independent control valve fluidly coupled to each of one or more first gas channels.

9. The gas distribution system of claim 1, further comprising an independent control valve fluidly coupled to each of the one or more second gas channels.

10. The gas distribution system of claim 1, wherein a plurality of the one or more first gas channels are fluidly coupled together upstream of the flange.

11. The gas distribution system of claim 1, wherein a plurality of the one or more second gas channels are fluidly coupled together upstream of the flange.

12. A gas-phase reactor system comprising:

a reaction chamber;

a gas distribution system comprising;

a flange;

one or more first gas expansion ports formed within the flange;

one or more second gas expansion ports formed within the flange;

one or more first gas channels formed within the flange, wherein each of the one or more first gas channels terminate at one of the one or more of the first gas expansion ports; and

one or more second gas channels formed within the flange, wherein the one or more second gas channels terminate at one or more of the second gas expansion ports;

an exhaust source;

a first gas source fluidly coupled to the one or more first gas channels; and

a second gas source fluidly coupled to the one or more second gas channels.

13. The gas-phase reactor of claim 12, wherein the gas-phase reactor system comprises an epitaxial reactor.

14. The gas-phase reactor of claim 12, wherein the gas-phase reactor system comprises a horizontal flow reactor.

15. The gas-phase reactor of claim 12, wherein a number of the one or more first gas expansion ports is greater than or equal to three.

16. The gas-phase reactor of claim 15, wherein the number of the one or more first gas expansion ports is greater than or equal to five.

17. The gas-phase reactor of claim 12, wherein the gas distribution system is between a substrate handling chamber and the reaction chamber.

18. A method of providing gas-phase reactants to a surface of a substrate, the method comprising the steps of:

providing a gas-phase reactor system comprising;

a reaction chamber;

a gas distribution system comprising;

a flange;

one or more first gas expansion ports formed within the flange;

one or more second gas expansion ports formed within the flange;

one or more first gas channels formed within the flange, wherein each of the one or more first gas channels terminate at one of the one or more of the first gas expansion ports; and

one or more second gas channels formed within the flange, wherein the one or more second gas channels terminate at one or more of the second gas expansion ports;

an exhaust source;

a first gas source fluidly coupled to the one or more first gas channels; and

a second gas source fluidly coupled to the one or more second gas channels;

providing a substrate within the reaction chamber; and

exposing the substrate to a first gas from the first gas source and a second gas from the second gas source.

19. The method of providing gas-phase reactants to a surface of a substrate of claim 18, further comprising the steps of:

manipulating one or more control valves coupled to the one or more first gas channels; and

manipulating one or more control valves coupled to the one or more second gas channels.

20. The method of providing gas-phase reactants to a surface of a substrate of claim 18, further comprising the step of providing an asymmetric setting of one or more of a first gas from the first gas source and a second gas from the second gas source.