OPTOELECTRONIC SEMICONDUCTOR COMPONENT

• US 20150270459A1
• Filed: 09/24/2013
• Published: 09/24/2015
• Est. Priority Date: 09/27/2012
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Dirscherl, Georg, Wegleiter, Walter, Weidner, Karl, Cassignol, Caroline
• Granted Patent: US 9,484,508 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The invention relates to an optoelectronic semiconductor component, which has a carrier element (1), on which an optoelectronic semiconductor chip (2) having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip (2) is covered with a protective layer (3) that contains poly-para-xylenes.

Claims

1. An optoelectronic semiconductor component, comprising a carrier element, on which an optoelectronic semiconductor chip having at least one active layer is arranged, wherein the active layer is designed to emit or to receive light during operation and wherein the semiconductor chip is covered with a protective layer comprising parylene.

2. The semiconductor component according to claim 1, wherein the carrier element has a mounting surface facing away from the optoelectronic semiconductor chip, the semiconductor chip is laterally surrounded by a potting material, and the protective layer covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer of the semiconductor component.

3. The semiconductor component according to claim 1, wherein the protective layer consists of parylene.

4. The semiconductor component according to claim 1, wherein the parylene is a fluorine-substituted parylene and/or a combination of two or more parylene derivatives.

5. The semiconductor component according to claim 1, wherein the semiconductor chip is covered by the protective layer on all sides facing away from the carrier element.

6. The semiconductor component according to claim 1, wherein the protective layer forms an outer layer of the semiconductor component.

7. The semiconductor component according to claim 1, wherein the protective layer covers at least one part of the carrier element.

8. The semiconductor component according to claim 7, wherein the protective layer extends continuously from the semiconductor chip onto the carrier element.

9. The semiconductor component according to claim 1, wherein the carrier element has a mounting surface designed for mounting the semiconductor component on a carrier, and wherein the protective layer covers all surfaces of the semiconductor component apart from the mounting surface.

10. The semiconductor component according to claim 1, wherein a wavelength conversion layer is arranged on the semiconductor chip below the protective layer.

11. The semiconductor component according to claim 1, wherein at least one contact structure is present which electrically conductively connects at least one electrical connection element of the carrier element to an electrical contact element of the semiconductor chip, and the contact structure is covered by the protective layer.

12. The semiconductor component according to claim 11, wherein the electrical connection element is formed by a plated-through hole through the carrier element.

13. The semiconductor component according to claim 11, wherein the contact structure is formed by a metal film.

14. The semiconductor component according to claim 1, wherein the semiconductor chip is at least partly surrounded by a potting material on the carrier element and the protective layer covers the potting material.

15. The semiconductor component according to claim 14, wherein the potting material comprises a silicone.

16. The semiconductor component according to claim 1, wherein

the carrier element has at least two electrical connection elements which are embodied as plated-through holes and which extend from a mounting surface facing away from the semiconductor chip through the carrier element as far as that side of the carrier element which faces the semiconductor chip,

the semiconductor chip is laterally surrounded by a potting material,

the semiconductor chip is arranged on one of the connection elements and an electrical contact element of the semiconductor chip is electrically conductively connected to another of the at least two electrical connection elements by means of a contact structure formed by a metal film, and the electrical contact structure extends through an opening in the potting material to the other of the at least two electrical connection elements,

a wavelength conversion layer is arranged on the semiconductor chip and the potting material is adjacent to the wavelength conversion layer in a planar fashion, and

the protective layer covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer.

17. The semiconductor component according to claim 1, wherein the optoelectronic semiconductor chip is a light emitting semiconductor chip.

18. An optoelectronic semiconductor component, comprising a carrier element, on which an optoelectronic semiconductor chip having at least one active layer is arranged, wherein the active layer is designed to emit or to receive light during operation and wherein the semiconductor chip is covered with a protective layer comprising parylene, wherein the carrier element has a mounting surface facing away from the optoelectronic semiconductor chip, the semiconductor chip is laterally surrounded by a potting material, and the protective layer covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer of the semiconductor component, and wherein the carrier element has at least two electrical connection elements which are embodied as plated-through holes and which extend from the mounting surface facing away from the semiconductor chip through the carrier element as far as that side of the carrier element which faces the semiconductor chip.