SENSING STRUCTURE OF ALIGNMENT OF A PROBE FOR TESTING INTEGRATED CIRCUITS

• US 20150301106A1
• Filed: 06/30/2015
• Published: 10/22/2015
• Est. Priority Date: 06/10/2010
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Pagani, Alberto
• Granted Patent: US 9,880,219 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B06B 2201/00 Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
• CPC Class Codes: C12Q 1/00 Measuring or testing processes involving enzymes, nucleic acids or microorganisms measuring or testing apparatus with condition measuring or sensing means, e.g. colony counters, C12M1/34; Compositions therefor; Processes of preparing such compositions
• CPC Class Codes: C12Q 2304/00 Chemical means of detecting microorganisms hydrolase substrates C12Q2334/00, peptidase substrates C12Q2337/00
• CPC Class Codes: C12Q 2326/00 Chromogens for determinations of oxidoreductase enzymes
• CPC Class Codes: G01N 1/00 Sampling; Preparing specimens for investigation
• CPC Class Codes: G01R 1/06794 Devices for sensing when probes are in contact, or in position to contact, with measured object
• CPC Class Codes: G01R 11/00 Electromechanical arrangements for measuring time integral of electric power or current, e.g. of consumption monitoring electric consumption of electrically-propelled vehicles B60L3/00
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/2891 related to sensing or controlling of force, position, temperature G01R31/2874 takes precedence; sensing of force G01L; sensing of position G01B, G01D; sensing of temperature G01K; controlling in general G05
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2221/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

Abstract

A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential.

Claims

1. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:

a conductive probe region;

a first sensing region at least partially surrounding the conductive probe region; and

a plurality of sensing elements connected in series;

wherein a first sensing element of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the conductive probe region;

wherein a second sensing element of the plurality of sensing elements has two terminals respectively connected to the conductive probe region and a first reference potential.

2. The sensing structure of claim 1, wherein each sensing element comprises a diode or a transistor.

3. The sensing structure of claim 1, further comprising additional sensing regions and for each additional sensing region a different value of an electrical parameter is measurable between the additional sensing region and the first reference potential for determining a drift direction of the probe.

4. The sensing structure of claim 1, wherein the first sensing region is further connected to a second reference potential and one of the first and second reference potentials is a ground potential.

5. The sensing structure of claim 4, further comprising an additional probe region;

a further probe region;

a second sensing region at least partially surrounding the additional probe region, and wherein the first sensing region at least partially surrounds the additional and further probe region.

6. The sensing structure of claim 1, wherein the conductive probe region has a diamond shape in a top view and the first sensing region partially surrounds two sides of the diamond shape of the conductive probe region.

7. The sensing structure of claim 1, further comprising a reference pad and a ground pad respectively connected to the first and the second sensing elements, wherein the reference pad is connected to a reference voltage probe for providing a second reference potential and the ground pad is connected to a ground potential for providing the first reference potential.

9. The sensing structure of claim 7, further comprising a second conductive probe region and a second sensing region at least partially surrounding the second conductive probe region, and a third sensing element connecting the first sensing region to the second sensing region.

10. The sensing structure of claim 7, further comprising a fourth sensing element connecting the second conductive probe region to the first reference potential.

11. The sensing structure of claim 9, further comprising a third conductive probe region adjacent to the first sensing region and the second sensing region electrically connected to the first sensing region as a continuous conductive sensing region;

and a fourth sensing element connecting a third sensing region partially surrounding the third conductive probe region to the first and the second sensing regions.

12. The sensing structure of claim 11, wherein the first, the second, and the third sensing regions partially surround all the first, the second, and the third conductive probe regions.

8. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:

a conductive probe region;

a first sensing region at least partially surrounding the conductive probe region; and

a plurality of sensing elements connected in series;

wherein a first sensing element of the plurality of sensing elements has two terminals respectively connecting the first sensing region to a first reference potential and a first terminal of a second sensing element of the plurality of sensing elements; and

wherein the second sensing element has a second terminal connected to the conductive probe region.

13. A substrate for integrated circuits, comprising:

a conductive probe region;

a plurality of sensing regions partially surround the conductive probe region and connectable to a probe; and

a plurality of sensing elements connecting, in series, the plurality of sensing regions to the conductive probe region;

wherein each of the plurality of sensing elements has two terminals connecting two of the plurality of sensing regions, and a probe sensing element connecting the plurality of sensing elements to the conductive probe region.

14. The substrate of claim 13, wherein the connection between the probe sensing element and the plurality of sensing elements is further connected to a ground reference potential.

15. The sensing structure of claim 13, wherein the conductive probe region has a round shape and the plurality of sensing regions each has an arc shape partially surrounding the conductive probe region.

16. The sensing structure of claim 13, wherein the probe sensing element and the plurality of sensing elements include a diode or a transistor.

17. A substrate for integrated circuits, comprising:

a conductive probe region;

a probe sensing element connecting a ground terminal to the conductive probe region;

a plurality of sensing regions partially surround the conductive probe region and connectable to a probe; and

a plurality of sensing elements connecting, in series, the plurality of sensing regions to each other, wherein each of the plurality of sensing elements has two terminals, each of the two terminals connecting to one of the plurality of sensing regions.

18. The substrate of claim 17, wherein one of the plurality of sensing element is provided with a reference voltage potential.

19. The sensing structure of claim 17, wherein the conductive probe region has a round shape and the plurality of sensing regions each has an arc shape partially surrounding the conductive probe region.

20. The sensing structure of claim 17, wherein the probe sensing element and the plurality of sensing elements include a diode or a transistor.