PACKAGE SYSTEMS

• US 20150340341A1
• Filed: 07/31/2015
• Published: 11/26/2015
• Est. Priority Date: 10/08/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: SHU, Chia-Pao, CHENG, Chun-wen, CHANG, Kuei-Sung, HUANG, Hsin-Ting, TSAI, Shang-Ying, PENG, Jung-Huei
• Granted Patent: US 9,355,896 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/0362 Photolithography
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05551 comprising apertures or cavities
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05617 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
• CPC Class Codes: H01L 2224/05638 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/061 Disposition
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/08225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/26145 Flow barriers
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29014 being circular or elliptic
• CPC Class Codes: H01L 2224/29017 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/2902 : Disposition
• CPC Class Codes: H01L 2224/291 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29117 : the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
• CPC Class Codes: H01L 2224/29124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29138 : the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/29144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/29181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/301 : Disposition
• CPC Class Codes: H01L 2224/32058 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/321 : Disposition
• CPC Class Codes: H01L 2224/32106 : the layer connector connecting one bonding area to at least two respective bonding areas
• CPC Class Codes: H01L 2224/32148 : the layer connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83365 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/30 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS

Abstract

A package system includes a first substrate; and a second substrate electrically coupled with the first substrate. The package system further includes a semiconductor material between the first substrate and the second substrate. The semiconductor material includes a pad, and at least one guard ring surrounding the pad and spaced from the pad. The package system further includes a metallic material bonded to the semiconductor material, wherein the metallic material at least partially fills at least one opening in at least one of the first substrate or the second substrate.

Claims

1. A package system comprising:

a first substrate;

a second substrate electrically coupled with the first substrate;

a semiconductor material between the first substrate and the second substrate, wherein the semiconductor material comprises;

a pad, and

at least one guard ring surrounding the pad and spaced from the pad; and

a metallic material bonded to the semiconductor material, wherein the metallic material at least partially fills at least one opening in at least one of the first substrate or the second substrate.

2. The package system of claim 1, wherein the metallic material extends into a space between the at least one guard ring and the pad.

3. The package system of claim 1, wherein the at least one opening comprises:

a first opening in the first substrate; and

a second opening in the second substrate, wherein the metallic material is within both the first opening and the second opening.

4. The package system of claim 3, wherein the first opening is closer to a center of the package system than an inside edge of the at least one guard ring.

5. The package system of claim 3, wherein the first opening is farther from a center of the package system than an outer edger of the at least one guard ring.

6. The package system of claim 3, wherein the second opening is closer to a center of the package system than an inside edge of the at least one guard ring.

7. The package system of claim 3, wherein the second opening is farther from a center of the package system than an outer edger of the at least one guard ring.

8. The package system of claim 1, wherein the at least one opening comprises a plurality of discontinuous openings in at least one of the first substrate or the second substrate.

9. The package system of claim 1, wherein the at least one opening comprises a continuous opening in at least one of the first substrate or the second substrate, and the continuous opening is farther from a center of the package system than an outer edge of the pad.

10. A package system comprising:

a first substrate;

a second substrate electrically coupled with the first substrate;

a semiconductor material between the first substrate and the second substrate, wherein the semiconductor material comprises;

a plurality of pads, and

a plurality of guard rings, wherein each guard ring of the plurality of guard rings surrounds a corresponding pad of the plurality of pads; and

a metallic material bonded to the semiconductor material, wherein the metallic material comprises a plurality of metallic regions, and each metallic region of the plurality of metallic regions at least partially fills at least one opening of a plurality of openings in the first substrate or the second substrate.

11. The package system of claim 10, wherein each metallic region of the plurality of metallic regions are separated from other metallic regions of the plurality of metallic regions.

12. The package system of claim 10, wherein at least one of the first substrate or the second substrate comprises an integrated circuit.

13. The package system of claim 10, wherein the plurality of openings includes a first plurality of openings in the first substrate and a second plurality of openings in the second substrate.

14. A package system comprising:

a first substrate comprises a first integrated circuit;

a second substrate electrically coupled with the first substrate;

a semiconductor material between the first substrate and the second substrate, wherein the semiconductor material comprises a pad; and

a metallic material bonded to the semiconductor material, wherein the metallic material at least partially fills at least one opening in at least one of the first substrate or the second substrate, and the metallic material comprises;

a metallic pad, and

a metallic guard ring surrounding the metallic pad.

15. The package system of claim 14, wherein the second substrate comprises a second integrated circuit.

16. The package system of claim 14, wherein the second substrate comprises conductive wire routing.

17. The package system of claim 14, wherein the metallic pad is continuous with the metallic guard ring.

18. The package system of claim 14, wherein the at least one opening is between the metallic pad and the metallic guard ring.

19. The package system of claim 14, wherein the at least one opening comprises a plurality of discontinuous openings.

20. The package system of claim 14, wherein the at least one opening has a depth ranging from about 1 micron (μ

m) to about 2 μ

m.