HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF

• US 20150349210A1
• Filed: 08/13/2015
• Published: 12/03/2015
• Est. Priority Date: 03/16/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Ou, Chen, Tu, Chun-Hsiang, Kuo, De-Shan, Ko, Chun-Teng, Chiu, Po-Shun, Hsu, Chia-Liang
• Granted Patent: US 9,640,731 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Claims

1. A light-emitting diode structure, comprising:

a first semiconductor layer;

a second semiconductor layer under the first semiconductor layer;

a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light;

a first electrical pad on the first semiconductor layer;

a first extension connecting to the first electrical pad; and

a first reflective layer covering the first extension and exposing the first electrical pad,

wherein the reflectivity of the first reflective layer is higher than that of the first extension.

2. A light-emitting diode structure according to claim 1, further comprising a first electrical conducting layer on the first semiconductor layer and under the first electrical pad and the first extension.

3. A light-emitting diode structure according to claim 2, wherein the first electrical conducting layer comprises ITO, InO, SnO, CTO, ATO, ZnO, GaP or the combination thereof.

4. A light-emitting diode structure according to claim 1, further comprises a substrate under the second semiconductor layer.

5. A light-emitting diode structure according to claim 1, wherein the first reflective layer is above the first electrical pad.

6. A light-emitting diode structure according to claim 1, wherein the first reflective layer comprises metallic material or distributed Bragg reflector (DBR).

7. A light-emitting diode structure according to claim 1, wherein the first electrical pad and the first extension are formed by the same process such that they have substantially the same thickness.

8. A light-emitting diode structure according to claim 2′

the first reflective layer and the first extension have substantially the same transverse width.

9. A light-emitting diode structure according to claim 1, wherein the first reflective layer is only on the first extension.

10. A light-emitting diode structure according to claim 1, further comprising a second electrical pad and a second extension, wherein the second electrical pad and the second extension ohmically contact the second semiconductor layer.

11. A light-emitting diode structure according to claim 10, further comprising a second reflective layer covering the second extension and exposing the second electrical pad.

12. A light-emitting diode structure, comprising:

a first semiconductor layer;

a second semiconductor layer under the first semiconductor layer;

a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light;

a first electrical pad on the first semiconductor layer; and

a first reflective layer covering the first extension and exposing the first electrical pad;

wherein the reflectivity of the first reflective layer is higher than that of the first electrical pad.

13. A light-emitting diode structure according to claim 12, further comprising a first electrical conducting layer on the first semiconductor layer and under the first electrical pad and the first extension.

14. A light-emitting diode structure according to claim 13, wherein the first electrical conducting layer comprises ITO, InO, SnO, CTO, ATO, ZnO, GaP or the combination thereof.

15. A light-emitting diode structure according to claim 12, wherein the first reflective layer comprises metallic material or distributed Bragg reflector (DBR).

16. A light-emitting diode structure according to claim 12, wherein the first reflective layer is above the first electrical pad.

17. A light-emitting diode structure according to claim 12, wherein the first electrical pad and the first extension are formed by the same process such that they have substantially the same thickness.

18. A light-emitting diode structure according to claim 12, wherein the first reflective layer and the first extension have substantially the same transverse width.

19. A light-emitting diode structure according to claim 12, wherein the first reflective layer is only on the first extension.

20. A light-emitting diode structure according to claim 12, further comprising a second electrical pad and a second extension, wherein the second electrical pad and the second extension ohmically contact the second semiconductor layer.