METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES

• US 20150357556A1
• Filed: 04/18/2013
• Published: 12/10/2015
• Est. Priority Date: 12/31/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chepulskyy, Roman, Apalkov, Dmytro, Khvalkovskiy, Alexey Vasilyevitch
• Granted Patent: US 9,478,730 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.

Claims

1. A magnetic junction for use in a magnetic device comprising:

a pinned layer;

a nonmagnetic spacer layer; and

a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;

wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and

wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled.

2. The magnetic junction of claim 1 wherein the at least two magnetic layers include a first magnetic and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including B.

3. The magnetic junction of claim 2 wherein the at least one of the first magnetic layer and the second magnetic layer includes Co, Fe and Ni and at least one of Ta, B, Zr, Cr, V, Al, Be, Ti, Zn, Hf, Pd, Pt, Bi and Ga.

4. The magnetic junction of claim 3 wherein the at least one of the first magnetic layer and the second magnetic layer includes Co_x1 Fe_x2Ni_x3Mn_x4M1_y1M2_y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga.

5. The magnetic junction of claim 1 wherein the nonmagnetic insertion layer is not more than five Angstroms thick.

6. The magnetic junction of claim 1 further comprising:

a first insulating spacer layer and a second insulating spacer layer, the magnetic substructure residing between the first insulating spacer layer and the second insulting spacer layer.

7. The magnetic junction of claim 6 wherein each of the first insulating spacer layer and the second insulating spacer layer includes crystalline MgO.

8. The magnetic junction of claim 7 wherein the nonmagnetic spacer layer is the first insulating spacer layer.

9. The magnetic junction of claim 8 further comprising:

an additional pinned layer, the second insulating spacer layer being between the additional pinned layer and the free layer.

10. The magnetic junction of claim 9 wherein the additional pinned layer includes an additional magnetic substructure having at least two additional magnetic layers interleaved with at least one additional insertion layer, each of the at least one additional insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr.

11. The magnetic junction of claim 1 wherein the free layer includes the magnetic substructure.

12. The magnetic junction of claim 11 wherein the free layer includes a polarization enhancement layer.

13. The magnetic junction of claim 1 wherein the pinned layer includes the magnetic substructure.

14. The magnetic junction of claim 1 wherein the at least two magnetic layers and the at least one insertion layer correspond to a single layer having varying concentration of a plurality of constituents, the nonmagnetic insertion layer corresponding to at least one concentration of the at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least one concentration having at least one global peak corresponding to the nonmagnetic insertion layer.

15. The magnetic junction of claim 14 wherein the global peak corresponds to a total concentration of all of the at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, being at least fifty percent.

16. A magnetic memory comprising:

a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled; and

a plurality of bit lines.

17. The magnetic memory of claim 16 wherein the at least two magnetic layers include a first magnetic layer and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer includes Co_x1Fe_x2Ni_x3Mn_x4M1_y1M2_y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga.

18. The magnetic memory of claim 16 wherein the nonmagnetic insertion layer is not more than five Angstroms thick.

19. The magnetic memory of claim 16 wherein the magnetic substructure further includes:

a first insulating spacer layer and a second insulating spacer layer, the magnetic substructure residing between the first insulating spacer layer and the second insulting spacer layer.

20. The magnetic memory of claim 16 wherein each of the at least one magnetic junction further includes:

an additional pinned layer, the second insulating spacer layer being between the additional pinned layer and the free layer.