• US 20150381171A1
  • Filed: 09/02/2015
  • Published: 12/31/2015
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
Patent Images

1. A radio-frequency (RF) switch comprising:

  • at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate;

    a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode; and

    an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.

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