HKMG HIGH VOLTAGE CMOS FOR EMBEDDED NON-VOLATILE MEMORY
First Claim
1. An integrated circuit (IC), comprising:
- an embedded memory region comprising an embedded non-volatile memory (NVM) device; and
a periphery region comprising a high voltage high-κ
metal gate (HV HKMG) transistor disposed over a high voltage (HV) gate insulating layer, and a periphery circuit disposed over a gate oxide layer.
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Accused Products
Abstract
The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a HKMG (high-κ metal gate) integrated circuit which includes a high voltage (HV) HKMG transistor. NVM devices (e.g., flash memory) are operated at high voltages for its read and write operations and hence a HV device is necessary for integrated circuits involving non-volatile embedded memory and HKMG logic circuits. Forming a HV HKMG circuit along with the HKMG periphery circuit reduces the need for additional boundaries between the HV transistor and rest of the periphery circuit. This method further helps reduce divot issue and reduce cell size.
25 Citations
20 Claims
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1. An integrated circuit (IC), comprising:
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an embedded memory region comprising an embedded non-volatile memory (NVM) device; and a periphery region comprising a high voltage high-κ
metal gate (HV HKMG) transistor disposed over a high voltage (HV) gate insulating layer, and a periphery circuit disposed over a gate oxide layer. - View Dependent Claims (2, 3, 4, 5)
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6. An integrated circuit (IC) comprising:
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a semiconductor substrate including a periphery region and a memory cell region separated by a boundary region; a pair of split gate flash memory cells disposed on the memory cell region; a HKMG logic circuit disposed over a gate oxide layer on the periphery region; and a high voltage (HV) high-κ
metal gate (HKMG) transistor disposed over a HV gate insulating layer on the periphery region at a position between the boundary region and the HKMG logic circuit. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method of forming an integrated circuit (IC) comprising:
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providing a semiconductor substrate comprising a first region and a second region; forming a non-volatile memory (NVM) device over the first region; selectively forming a high voltage (HV) gate insulating layer over the semiconductor substrate in the second region; forming a HV high-κ
metal gate (HKMG) transistor over the HV gate insulating layer; andforming one or more HKMG CMOS devices in the second region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification