SOLID-STATE IMAGING DEVICE WITH LAYERED MICROLENSES AND METHOD FOR MANUFACTURING SAME

• US 20160013234A1
• Filed: 09/22/2015
• Published: 01/14/2016
• Est. Priority Date: 09/30/2011
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: C/O SONY CORPORATION
• Inventors: Ootsuka, Yoichi, Yamashita, Tomoyuki, Tabuchi, Kiyotaka, Toumiya, Yoshinori, Ogino, Akiko
• Granted Patent: US 9,741,757 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof

Abstract

A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.

Claims

1. An imaging device comprising:

a first microlens having a first lens layer and a second lens layer disposed above the first lens layer;

a second microlens disposed adjacent to the first microlens having a third lens layer and a forth lens layer disposed above the third lens layer; and

an inter-pixel gap disposed between the first microlens and the second microlens,

wherein

the first lens layer, the second lens layer, the third lens layer and the fourth lens layer each have a thickness greater than zero throughout the inter-pixel gap,

a periphery of the first microlens is disposed between the inter-pixel gap and a center portion of the first microlens,

a periphery of the second microlens is disposed between the inter-pixel gap and a center portion of the second microlens,

a thickness of the second lens layer at the center portion of the first microlens is less than a thickness of the second lens layer at the periphery of the first microlens, and

a thickness of the fourth lens layer at the center portion of the second microlens is less than a thickness of the forth lens layer at the periphery of the second microlens.

2. The imaging device according to claim 1, wherein the first lens layer and the third lens layer each include at least one material selected from among the group consisting of silicon, an oxide, a nitride and any combination thereof.

3. The imaging device according to claim 1, wherein the first lens layer and the third lens layer are selected from among the group consisting of SiON, SiN and any combination thereof.

4. The imaging device according to claim 1, wherein the second lens layer and the forth lens layer each include at least one material selected from among the group consisting of silicon, an oxide, a nitride, carbon and any combination thereof.

5. The imaging device according to claim 1, wherein the second lens layer and the forth lens layer are selected from among the group consisting of SiON, SiN, SiO, SiOC and any combination thereof.

6. The imaging device according to claim 1 further comprising a pixel section and a peripheral circuit section.

7. The imaging device according to claim 6, wherein the pixel section includes a transfer transistor, a rest transistor and an amplification transistor.

8. The imaging device according to claim 7, wherein the pixel section further includes a selection transistor.

9. The imaging device according to claim 6, wherein the peripheral circuit section includes a vertical drive circuit, one or more column processing circuits, a horizontal drive circuit, an output circuit, and a control circuit.

10. The imaging device according to claim 9, wherein the one or more column processing circuits are configured to perform correlated double sampling (CDS).

11. The imaging device according to claim 1 further comprising a substrate that includes one or more photodiodes, wherein the first microlens, the second microlens and the inter-pixel gap are disposed above the substrate.

12. The imaging device according to claim 11, further comprising an insulating layer formed of a single layer or multiple layers, wherein the insulating layer is disposed above the substrate and wherein the insulating layer is disposed below the first microlens, the second microlens and the inter-pixel gap.

13. The imaging device according to claim 12, wherein the insulating layer comprises a single-layer structure of SiO or a multiple-layer structure of HfO₂ and SiO.

14. The imaging device according to claim 13 further comprising an inter-pixel blocking layer formed from at least one material selected from among the group consisting of W, Al, Cu, a carbon black, a titanium black, a metal black, or an organic material.

15. The imaging device according to claim 14 further comprising a first planarization layer formed on the insulating layer.

16. The imaging device according to claim 15, wherein the first planarization layer includes an acrylic resin.

17. The imaging device according to claim 16 further comprising one or more color filters formed on the first planarization layer.

18. The imaging device according to claim 17 further comprising a second planarization layer formed on the one or more color filters.

19. The imaging device according to claim 18, wherein the second planarization layer includes an acrylic resin, a styrene resin, or a styrene-acryl copolymerizing resin.

20. The imaging device according to claim 19 further comprising a buffer layer formed on the second planarization layer and including SiO or SiON.