DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

• US 20160027857A1
• Filed: 07/22/2015
• Published: 01/28/2016
• Est. Priority Date: 07/24/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Jin, Guanghai, Kim, Nayoung
• Granted Patent: US 9,373,652 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/3213 Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78666 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes: a substrate having a major surface; and a capacitor disposed over the substrate. The capacitor includes a first electrode, and a second electrode disposed over the first electrode. The second electrode includes a first region, a second region and an opening when viewed in a direction perpendicular to the major surface. The first region has a first thickness, and a second region has a second thickness that is greater than the first thickness.

Claims

1. A display apparatus comprising:

a substrate comprising a major surface; and

a capacitor disposed over the substrate, the capacitor comprising;

a first electrode,

a second electrode disposed over the first electrode, the second electrode comprising a first region, a second region and an opening when viewed in a direction perpendicular to the major surface, the first region having a first thickness, a second region having a second thickness that is greater than the first thickness, and

a first insulating layer disposed between the first electrode and the second electrode.

2. The display apparatus of claim 1, wherein the first electrode comprises a semiconductor layer, and substantially the entire portion of the first electrode is doped with impurities.

3. The display apparatus of claim 1, wherein the first electrode comprises a concave portion recessed from a side when viewed in the direction.

4. The display apparatus of claim 3, wherein the opening of the second electrode overlaps at least partially with the concave portion when viewed in the direction.

5. The display apparatus of claim 1, wherein the first region of the second electrode overlaps with the first electrode, and the second region of the second electrode does not overlap with the first electrode when viewed in the direction.

6. The display apparatus of claim 1, wherein the first electrode is electrically connected to an external line through a contact hole exposing a portion of the first electrode overlapping with the opening when viewed in the direction.

7. The display apparatus of claim 1, further comprising:

a second insulating layer contacting an upper surface of the second region of the second electrode; and

a third insulating layer contacting an upper surface of the first region of the second electrode.

8. The display apparatus of claim 7, further comprising a thin film transistor comprising:

an active layer formed at a level substantially the same as that of the first electrode, and

a gate electrode formed at another level substantially the same as that of the second electrode,

wherein the first insulating layer is disposed between the active layer and the gate electrode.

9. The display apparatus of claim 8, wherein the gate electrode has the second thickness.

10. The display apparatus of claim 1, further comprising a thin film transistor comprising:

an active layer formed at a level substantially the same as that of the first electrode, and

a gate electrode formed at another level substantially the same as that of the second electrode.

11. The display apparatus of claim 10, wherein the gate electrode has the second thickness.

12. A method of manufacturing a display apparatus, the method comprising:

providing a substrate; and

forming a capacitor over the substrate,

wherein the capacitor comprises a first electrode of a capacitor, a second electrode and a first insulating layer disposed between the first electrode and the second electrode,

wherein the second electrode comprises a first region, a second region and an opening when viewed in a direction perpendicular to a major surface of the substrate, the first region having a first thickness, a second region having a second thickness that is greater than the first thickness.

13. The method of claim 12, wherein the first electrode of the capacitor comprises a concave portion recessed from a side of the first electrode when viewed in the direction, wherein the concave portion partially overlaps with the opening when viewed in the direction.

14. The method of claim 12, wherein the forming of the capacitor comprises forming the second electrode, which comprises:

forming a metallic layer portion having the second thickness and including the opening over the first insulating layer;

forming a second insulating layer on the metallic layer portion; and

etching the second insulating layer and the metallic layer portion such that a portion of the metallic layer portion has the first thickness, thereby forming the second electrode comprising the first region with the first thickness and the second region with the second thickness.

15. The method of claim 14, wherein the forming of the capacitor comprises forming the first electrode, which comprises:

forming a semiconductor layer portion over the substrate;

prior to the forming of the second insulating layer, primarily doping the semiconductor layer portion with impurities through the opening of the metallic layer portion; and

subsequently to the etching, secondarily doping the semiconductor layer portion with impurities through the first region of the second electrode.

16. The method of claim 14, further comprising forming a contact hole through the second insulating layer such that the contact hole exposes a portion of the first electrode which overlaps with the opening when viewed in the direction.

17. The method of claim 16, further comprising forming a conductive connector connecting the first electrode to an external line via the contact hole.

18. The method of claim 14, further comprising forming, on the second electrode, a third insulating layer covering and contacting the first region of the second electrode.

19. The method of claim 15, further comprising forming a thin film transistor, which comprises:

forming another semiconductor layer portion simultaneously with the forming of the semiconductor layer portion;

forming a gate electrode simultaneously with the forming of the metallic layer portion; and

doping the other semiconductor layer portion with impurities thereby forming an active layer comprising a source and a drain, wherein the doping of the other semiconductor layer portion is simultaneous with the doping of the semiconductor layer portion.

20. The method of claim 19, wherein the gate electrode has the second thickness.