SEMICONDUCTOR DEVICE

• US 20160028323A1
• Filed: 10/02/2015
• Published: 01/28/2016
• Est. Priority Date: 03/31/2014
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: YOSHIDA, Yoichi
• Granted Patent: US 9,379,638 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H02M 1/0048 Circuits or arrangements for reducing losses using snubbers H02M1/34
• CPC Class Codes: H02M 7/02 Conversion of ac power input into dc power output without possibility of reversal
• CPC Class Codes: H02M 7/103 Containing passive elements (capacitively coupled) which are ordered in cascade on one source
• CPC Class Codes: H02M 7/217 using semiconductor devices only
• CPC Class Codes: H02M 7/2195 the switches being synchronously commutated at the same frequency of the AC input voltage
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A semiconductor device comprising a rectifier circuit, wherein the rectifier circuit includes first and second input wires to which AC signals whose phases are inverted from each other are transmitted; a first transistor of a first conductive type which has a first power wire connected with a first transistor terminal and a gate connected with the first input wire; a second transistor of the first conductive type which has the first power wire connected with a first transistor terminal, and a gate connected with the second input wire; a third transistor of a second conductive type which has a second power wire connected with a first transistor terminal, a second transistor terminal connected with a second transistor terminal of the first transistor and a gate connected with the first input capacitor; and a fourth transistor of the second conductive type which has the second power wire connected with a first transistor terminal.

Claims

1. A semiconductor device comprising a rectifier circuit, wherein the rectifier circuit includes:

first and second input wires to which AC signals whose phases are inverted from each other are transmitted;

a first transistor of a first conductive type which has a first power wire connected with a first transistor terminal and a gate connected with the first input wire;

a second transistor of the first conductive type which has the first power wire connected with a first transistor terminal, and a gate connected with the second input wire;

a third transistor of a second conductive type which has a second power wire connected with a first transistor terminal, a second transistor terminal connected with a second transistor terminal of the first transistor and a gate connected with the first input capacitor;

a fourth transistor of the second conductive type which has the second power wire connected with a first transistor terminal, a second transistor terminal connected with a second transistor terminal of the second transistor and a gate connected with the second input capacitor;

a fifth transistor of the second conductive type which has a gate connected with the first input wire, and a second transistor terminal connected with a second transistor terminal of the third transistor;

a sixth transistor of the second conductive type which has a gate connected with the second input wire, and a second transistor terminal connected to a second transistor terminal of the fourth transistor; and

a seventh transistor of the first conductive type which is inserted in the second power wire and has a gate connected to a first transistor terminal of the fifth transistor and a first transistor terminal of the sixth transistor.

2. The semiconductor device according to claim 1, further comprising a third capacitor that is connected between the first power wire and the second power wire.

3. The semiconductor device according to claim 1, further comprising:

a plurality of rectifier circuits that is formed by connecting in cascade a first output terminal provided on the first power wire and a second output terminal provided on the second power wire; and

a smoothing capacitor that is connected between the first power wire of the rectifier circuit arranged at a first stage and the second power wire of the rectifier circuit arranged at a final stage.

4. The semiconductor device according to claim 1, further comprising:

a plurality of rectifier circuits that includes loads connected with a first output terminal provided on the first power wire through a common wire, respectively; and

a smoothing capacitor that is connected between the common wire and a ground wire.

5. The semiconductor device according to claim 1, further comprising a power circuit that is connected between the first power wire and the second power wire, and that generates a second power voltage by performing at least one of stepping up and stepping down of a first power voltage transmitted through the second power wire.

6. A semiconductor device comprising a rectifier circuit, wherein the rectifier circuit includes:

a first bias circuit which generates a first input signal by superimposing a first AC signal on a first bias voltage;

a first transistor of a first conductive type which has a first power wire connected with a first transistor terminal and a gate receiving an input of the first input signal;

a second bias circuit which generates a second input signal by superimposing the first AC signal on a second bias voltage which is a voltage higher than the first bias voltage;

a second transistor of a second conductive type which has a second power wire connected to a first transistor terminal, and a gate receiving an input of the second input signal;

an inter-element wire which connects a second transistor terminal of the first transistor, and a second transistor terminal of the second transistor; and

a capacitor which has one end connected to the inter-element wire and an other end receiving an input of a second AC signal whose phase is inverted from a phase of the first AC signal.

7. The semiconductor device according to claim 6, further comprising a third capacitor that is connected between the first power wire and the second power wire.

8. The semiconductor device according to claim 6, further comprising:

a plurality of rectifier circuits that is formed by connecting in cascade a first output terminal provided on the first power wire and a second output terminal provided on the second power wire; and

a smoothing capacitor that is connected between the first power wire of the rectifier circuit arranged at a first stage and the second power wire of the rectifier circuit arranged at a final stage.

9. The semiconductor device according to claim 6, further comprising:

a plurality of rectifier circuits that includes loads connected with a first output terminal provided on the first power wire through a common wire, respectively; and

a smoothing capacitor that is connected between the common wire and a ground wire.

10. The semiconductor device according to claim 6, further comprising a power circuit that is connected between the first power wire and the second power wire, and that generates a second power voltage by performing at least one of stepping up and stepping down of a first power voltage transmitted through the second power wire.

11. A semiconductor device comprising a rectifier circuit, wherein the rectifier circuit includes:

a first transistor of a first conductive type which has a first power wire connected with a first transistor terminal and a gate receiving an input of the first AC signal;

a second transistor of a second conductive type which has a second power wire connected with a first transistor terminal, and a gate receiving an input of the first AC signal;

a third transistor of the second conductive type which has a gate connected with the first AC signal, and a second transistor terminal connected to a second transistor terminal of the second transistor;

a fourth transistor of the first conductive type which is inserted in the second power wire and has a gate connected to a first transistor terminal of the third transistor;

an inter-element wire which connects a second transistor terminal of the first transistor, a second transistor terminal of the second transistor and a second transistor terminal of the third transistor; and

a capacitor which has one end connected to the inter-element wire and an other end receiving an input of a second AC signal whose phase is inverted from a phase of the first AC signal.

12. The semiconductor device according to claim 11, further comprising a third capacitor that is connected between the first power wire and the second power wire.

13. The semiconductor device according to claim 11, further comprising:

a plurality of rectifier circuits that is formed by connecting in cascade a first output terminal provided on the first power wire and a second output terminal provided on the second power wire; and

a smoothing capacitor that is connected between the first power wire of the rectifier circuit arranged at a first stage and the second power wire of the rectifier circuit arranged at a final stage.

14. The semiconductor device according to claim 11, further comprising:

a plurality of rectifier circuits that includes loads connected with a first output terminal provided on the first power wire through a common wire, respectively; and

a smoothing capacitor that is connected between the common wire and a ground wire.

15. The semiconductor device according to claim 11, further comprising a power circuit that is connected between the first power wire and the second power wire, and that generates a second power voltage by performing at least one of stepping up and stepping down of a first power voltage transmitted through the second power wire.